Product Information

PSMN8R2-80YS

PSMN8R2-80YS electronic component of Nexperia

Datasheet
MOSFET, N CH, 80V, 82A, SOT669
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

50: USD 1.1425 ea
Line Total: USD 57.12

0 - Global Stock
MOQ: 50  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 50
Multiples : 1

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PSMN8R2-80YS
Nexperia

50 : USD 1.1978
200 : USD 1.0913
500 : USD 0.9896

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Current Id Max
Operating Temperature Min
Operating Temperature Range
Voltage Vgs Max
LoadingGif

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Additional Infomation About Product

PSMN8R2-80YS N-channel LFPAK 80 V 8.5 m standard level MOSFET Rev. 01 25 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provides low Improved mechanical and thermal RDSon and low gate charge characteristics High efficiency gains in switching LFPAK provides maximum power power converters density in a Power SO8 package 1.3 Applications DC-to-DC converters Motor control Lithium-ion battery protection Server power supplies Load switching 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 80 V DS j j I drain current T =25C V =10V --82 A D mb GS see Figure 1 P total power T = 25 C see Figure 2 - - 130 W tot mb dissipation T junction temperature -55 - 175 C j Avalanche ruggedness E non-repetitive V =10V T =25C - - 120 mJ DS(AL)S GS j(init) drain-source I =75 A V 80 V D sup avalanche energy R =50 unclamped GS Dynamic characteristics Q gate-drain charge V =10V I =25A -12 - nC GD GS D V = 40 V see Figure 14 DS Q total gate charge - 55 - nC G(tot) see Figure 15NXP Semiconductors PSMN8R2-80YS N-channel LFPAK 80 V 8.5 m standard level MOSFET Table 1. Quick reference continued Symbol Parameter Conditions Min Typ Max Unit Static characteristics R drain-source V =10V I =15A - - 13.4 m DSon GS D on-state resistance T = 100 C see Figure 12 j V =10V I =15A -5.8 8.5 m GS D T = 25 C see Figure 13 j see Figure 12 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4G gate mbb076 S mb D mounting base connected to 1234 drain SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN8R2-80YS LFPAK plastic single-ended surface-mounted package (LFPAK) 4 leads SOT669 PSMN8R2-80YS 1 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 25 June 2009 2 of 14

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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