Product Information

PSMN8R5-100PS

PSMN8R5-100PS electronic component of Nexperia

Datasheet
MOSFET, N-CH, 100V, 100A, TO-220AB
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.8668 ea
Line Total: USD 3.87

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1

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PSMN8R5-100PS
Nexperia

1 : USD 3.8668
10 : USD 2.9582
100 : USD 2.3907
500 : USD 2.1747

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Svhc
Operating Temperature Min
Operating Temperature Range
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Additional Infomation About Product

PSMN8R5-100PS N-channel 100 V 8.5 m standard level MOSFET in TO220 17 October 2013 Product data sheet 1. General description Standard level N-channel MOSFET in a TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High efficiency due to low switching and conduction losses Suitable for standard level gate drive sources 3. Applications AC-to-DC power supply equipment Motor control Server power supplies Synchronous rectification 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current T = 25 C V = 10 V Fig. 1 1 - - 100 A D j GS P total power dissipation T = 25 C Fig. 2 - - 263 W tot mb Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C 4.5 6.4 8.5 m DSon GS D j resistance Fig. 13 Fig. 12 Dynamic characteristics Q gate-drain charge V = 10 V I = 25 A V = 50 V - 33 - nC GD GS D DS Fig. 14 Fig. 15 Q total gate charge - 111 - nC G(tot) Avalanche Ruggedness E non-repetitive drain- V = 10 V T = 25 C I = 100 A - - 219 mJ DS(AL)S GS j(init) D source avalanche V 100 V R = 50 unclamped sup GS energy Fig. 3 1 Continious current limited by package. Scan or click this QR code to view the latest information for this product TO-220ABNXP Semiconductors PSMN8R5-100PS N-channel 100 V 8.5 m standard level MOSFET in TO220 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain G 3 S source mbb076 S mb D mounting base connected to drain 1 2 3 TO-220AB (SOT78) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN8R5-100PS TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB 7. Marking Table 4. Marking codes Type number Marking code PSMN8R5-100PS PSMN8R5-100PS 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 100 V DS j j V drain-gate voltage T 25 C T 175 C R = 20 k - 100 V DGR j j GS V gate-source voltage -20 20 V GS I drain current V = 10 V T = 25 C Fig. 1 1 - 100 A D GS j V = 10 V T = 100 C Fig. 1 - 75 A GS mb I peak drain current pulsed t 10 s T = 25 C Fig. 4 - 429 A DM p mb PSMN8R5-100PS All information provided in this document is subject to legal disclaimers. NXP N.V. 2013. All rights reserved Product data sheet 17 October 2013 2 / 14

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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