Product Information

PSMN7R8-120PS

PSMN7R8-120PS electronic component of Nexperia

Datasheet
MOSFET, N-CH, 120V, 70, TO-220
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.2774 ea
Line Total: USD 3.28

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 1
Multiples : 1

Stock Image

PSMN7R8-120PS
Nexperia

1 : USD 5.5368
10 : USD 4.8072
100 : USD 3.9214
500 : USD 3.2083
1000 : USD 2.8941

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Svhc
Operating Temperature Min
LoadingGif

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Additional Infomation About Product

PSMN7R8-120PS N-channel 120V 7.9m standard level MOSFET in TO220 25 January 2013 Product data sheet 1. General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment. 2. Features and benefits High efficiency due to low switching and conduction losses TO220 package Suitable for standard level gate drive 3. Applications AC-to-DC power supply Synchronous rectification Motor control 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 120 V DS j j I drain current T = 25 C V = 10 V Fig. 1 - - 70 A D mb GS P total power dissipation T = 25 C Fig. 2 - - 349 W tot mb Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C 4.7 6.72 7.9 m DSon GS D j resistance Fig. 12 Dynamic characteristics Q gate-drain charge V = 10 V I = 25 A V = 60 V - 50.5 - nC GD GS D DS Fig. 14 Fig. 15 Q total gate charge - 167 - nC G(tot) Avalanche ruggedness E non-repetitive drain- V = 10 V T = 25 C I = 70 A - - 386 mJ DS(AL)S GS j(init) D source avalanche V 120 V unclamped R = 50 sup GS energy Fig. 3 Scan or click this QR code to view the latest information for this product TO-220ABNXP Semiconductors PSMN7R8-120PS N-channel 120V 7.9m standard level MOSFET in TO220 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain G 3 S source mbb076 S mb D drain 1 2 3 TO-220AB (SOT78) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN7R8-120PS TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB 7. Marking Table 4. Marking codes Type number Marking code PSMN7R8-120PS PSMN7R8-120PS 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 120 V DS j j V drain-gate voltage T 25 C T 175 C R = 20 k - 120 V DGR j j GS V gate-source voltage -20 20 V GS I drain current V = 10 V T = 25 C Fig. 1 - 70 A D GS mb V = 10 V T = 100 C Fig. 1 - 70 A GS mb I peak drain current pulsed t 10 s T = 25 C Fig. 4 - 280 A DM p mb PSMN7R8-120PS All information provided in this document is subject to legal disclaimers. NXP B.V. 2013. All rights reserved Product data sheet 25 January 2013 2 / 13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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