NPT2022 GaN Wideband Transistor 48 V, 100 W Rev. V1 DC - 2 GHz Features GaN on Si HEMT D-Mode Transistor Suitable for linear and saturated applications Tunable from DC - 2 GHz 48 V Operation 20 dB Gain 900 MHz 60 % Drain Efficiency 900 MHz 100 % RF Tested Standard plastic package with bolt down flange RoHS* Compliant and 260C reflow compatible Description The NPT2022 GaN HEMT is a wideband transistor Functional Schematic optimized for DC - 2 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 100 W (50 dBm) in an industry standard plastic package. The NPT2022 is ideally suited for defense communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/ UHF/L/S-band radar. 2 1 Built using the SIGANTIC process - a proprietary GaN-on-Silicon technology. 3 Pin Configuration Pin No. Pin Name Function 1 RF / V RF Input / Gate IN G Ordering Information 2 RF / V RF Output / Drain OUT D Part Number Package 1 3 Pad Ground / Source NPT2022 Bulk Quantity 1. The exposed pad centered on the package bottom must be NPT2022-SMBPPR Sample Board connected to RF and DC ground. This path must also provide a low thermal resistance heat path. * Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. 1 11 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: NPT2022 GaN Wideband Transistor 48 V, 100 W Rev. V1 DC - 2 GHz RF Electrical Specifications: T = 25C, V = 48 V, I = 600 mA C DS DQ Parameter Test Conditions Symbol Min. Typ. Max. Units Small Signal Gain CW, 900 MHz G - 21 - dB SS Saturated Output Power CW, 900 MHz P - 50.5 - dBm SAT Drain Efficiency at Saturation CW, 900 MHz - 62 - % SAT Power Gain 900 MHz, P = 100 W G 19 20 - dB OUT P Drain Efficiency 900 MHz, P = 100 W 56 58 - % OUT Ruggedness: Output Mismatch All phase angles VSWR = 10:1, No Device Damage DC Electrical Characteristics: T = 25C C Parameter Test Conditions Symbol Min. Typ. Max. Units Drain-Source Leakage Current V = -8 V, V = 160 V I - - 24 mA GS DS DLK Gate-Source Leakage Current V = -8 V, V = 0 V I - - 12 mA GS DS GLK Gate Threshold Voltage V = 48 V, I = 24 mA V -2.5 -1.6 -0.5 V DS D T Gate Quiescent Voltage V = 48 V, I = 600 mA V -2.1 -1.4 -0.3 V DS D GSQ On Resistance V = 2 V, I = 180 mA R - 0.2 - DS D ON Maximum Drain Current V = 7 V pulsed, pulse width 300 s I - 14 - A DS D,MAX 2 22 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: