2N3906 NTE

2N3905 & 2N3906 Silicon PNP Transistor General Purpose TO92 Type Package Absolute Maximum Ratings: CollectorEmitter Voltage, V ...................................................... 40V CEO Collector Base Voltage, V ....................................................... 40V CBO EmitterBase Voltage, V .......................................................... 5V EBO Continuous Collector Current, I .................................................. 200mA C Total Device Dissipation (T = +25 C), P ......................................... 625mW A D Derate Above 25 C ..................................................... 5.0mW/ C Total Device Dissipation (T = +60 C), P ......................................... 250mW A D Total Device Dissipation (T = +25 C), P ............................................ 1.5W C D Derate Above 25 C ...................................................... 12mW/ C Operating Junction Temperature Range, T .................................. 55 to +150 C J Storage Temperature Range, T .......................................... 55 to +150 C stg Thermal Resistance, Junction to Case, R ..................................... 83.3 C/W thJC Thermal Resistance, Junction to Ambient, R ................................... 200 C/W thJA Electrical Characteristics: (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V I = 1mA, I = 0, Note 1 40 V (BR)CEO C B CollectorBase Breakdown Voltage V I = 10 A, I = 0 40 V (BR)CBO C E EmitterBase Breakdown Voltage V I = 10 A, I = 0 5 V (BR)EBO E C Collector Cutoff Current I V = 30V, V = 3V 50 nA CEX CE EB Base Cutoff Current I V = 30V, V = 3V 50 nA BL CE EB ON Characteristics (Note 1) DC Current Gain h FE 2N3905 V = 1V, I = 0.1mA 30 CE C 2N3906 60 2N3905 V = 1V, I = 1mA 40 CE C 2N3906 80 2N3905 V = 1V, I = 10mA 50 150 CE C 2N3906 100 300 2N3905 V = 1V, I = 50mA 30 CE C 2N3906 60 2N3905 V = 1V, I = 100mA 15 CE C 2N3906 30 Note 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.Electrical Characteristics (Contd): (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Contd) (Note 1) CollectorEmitter Saturation Voltage V I = 10mA, I = 1mA 0.25 V CE(sat) C B I = 50mA, I = 5mA 0.4 V C B BaseEmitter Saturation Voltage V I = 10mA, I = 1mA 0.65 0.85 V BE(sat) C B I = 50mA, I = 5mA 0.95 V C B SmallSignal Characteristics Current GainBandwidth Product f T 2N3905 I = 10mA, V = 20V, f = 100MHz 200 MHz C CE 2N3906 250 MHz Output Capacitance C V = 5V, I = 0, f = 1MHz 4.5 pF obo CB E Input Capacitance C V = 0.5V, I = 0, f = 100kHz 10.0 pF ibo CB C Input Impedance h ie 2N3905 I = 1mA, V = 10V, f = 1kHz 0.5 8.0 k C CE 2N3906 2.0 12 k Voltage Feedback Ratio h re 4 2N3905 I = 1mA, V = 10V, f = 1kHz 0.1 5.0 x 10 C CE 4 2N3906 0.1 10 x 10 SmallSignal Current Gain h fe 2N3905 I = 1mA, V = 10V, f = 1kHz 50 200 C CE 2N3906 100 400 Output Admittance h oe 2N3905 I = 1mA, V = 10V, f = 1kHz 1.0 40 mhos C CE 2N3906 3.0 60 mhos Noise Figure NF I = 100 A, V = 5V, R = 1k , C CE S 2N3905 f = 10Hz to 15.7kHz 5.0 db 2N3906 4.0 db Switching Characteristics Delay Time t 35 ns V = 3V, V = 0.5V, I = 10mA, d CC EB C I = 1mA B1 Rise Time t 35 ns r Storage Time t V = 3V, I = 10mA, s CC C 2N3905 I = I = 1mA 200 ns B1 B2 2N3906 225 ns Fall Time t f 2N3905 60 ns 2N3906 75 ns Note 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.