Product Information

NTE156

NTE156 electronic component of NTE

Datasheet
RECTIFIER SILICON 1000V PRV I

Manufacturer: NTE
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 4.0881 ea
Line Total: USD 40.88

0 - Global Stock
MOQ: 10  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 25
Multiples : 1

Stock Image

NTE156
NTE

25 : USD 1.1042
250 : USD 0.8918
500 : USD 0.879
1000 : USD 0.8511
2500 : USD 0.79
5000 : USD 0.7786
7500 : USD 0.7569
10000 : USD 0.7455

0 - WHS 2


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1
Multiples : 1

Stock Image

NTE156
NTE

1 : USD 2.2511
3 : USD 1.3536
10 : USD 1.1968
17 : USD 0.9831
47 : USD 0.9261

     
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RoHS - XON
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NTE156 General Purpose Silicon Rectifier Features: Low Leakage Low Forward Voltage Drop High Current Capability Maximum Ratings: (T = +25C unless otherwise specified. Single phase, half wave, 60Hz, A resistive or inductive load. For capacitive load, derate current by 20%) Peak Repetitive Reverse Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V RRM DC Blocking Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V R RMS Reverse Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V R(RMS) Average Rectified Forward Current. I O (.375 (9.5mm) lead length, T = +50C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A A NonRepetitive Peak Surge Current, I FSM (8.3ms single half sinewave superimposed on rated load) . . . . . . . . . . . . . . . . . . . . . . . . 70A Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +175C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +175C stg Typical Thermal Resistance, JunctiontoAnbient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50C/W thJA Electrical Characteristics: (T = +25C unless otherwise specified. Single phase, half wave, 60Hz, A resistive or inductive load. For capacitive load, derate current by 20%) Parameter Symbol Test Conditions Min Typ Max Unit Maximum Instantaneous Forward V I = 2A 1.1 V F F Voltage Drop Maximum Reverse Current I V = 1000V, T = +25C 5.0 A R RRM J V = 1000V, T = +100C 50 RRM J Maximum FullCycle Average Reverse I T +75C, .375 (9.5) leads 30 A R(AV) L Current Typical Junction Capacitance C Note 1 40 pF j Note 1. Measured at 1MHz and applied reverse voltage of 4.0 volts.1.075 .250 (27.3) (6.35) Min Max .030 (0.76) Dia Max .130 (3.3) Dia Max Color Band Denotes Cathode

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
NTE ELECTRONICS
NTE ELECTRONICS, INC.

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