Product Information

NTE2351

NTE2351 electronic component of NTE

Datasheet
Transistor: NPN; bipolar; Darlington; 80V; 4A; 1W

Manufacturer: NTE
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 5.239 ea
Line Total: USD 5.24

2 - Global Stock
Ships to you between
Wed. 22 May to Tue. 28 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 2
Multiples : 1
2 : USD 5.6925
10 : USD 5.175
50 : USD 4.5125
250 : USD 3.95
500 : USD 3.7125
1000 : USD 3.6125
2500 : USD 3.5125
5000 : USD 3.45

     
Manufacturer
Product Category
Polarisation
Mounting
Kind Of Transistor
Kind Of Package
Type Of Transistor
Collector Current
Collector-Emitter Voltage
Power Dissipation
Current Gain
LoadingGif

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NTE2351 (NPN) & NTE2352 (PNP) Silicon Complementary Transistors Darlington Power Amp, Switch Features: High DC Current Gain: h = 2000 Min V = 2V, I = 1A FE (1) CE C Low Saturation Voltage: V = 1.5V Max I = 3A CE(sat) C Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EBO Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A C Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA B Collector Power Dissipation, P C T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W A T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15W C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector CutOff Current I V = 100V, I = 0 20 A CBO CB E Emitter CutOff Current I V = 5V, I = 0 2.5 mA EBO EB C CollectorEmitter Breakdown Voltage V I = 10mA, I = 0 80 V (BR)CEO C B DC Current Gain h V = 2V, I = 1A 2000 FE (1) CE C h V = 2V, I = 3A 1000 FE (2) CE C CollectorEmitter Saturation Voltage V I = 3A, I = 6mA 1.5 V CE(sat) C B BaseEmitter Saturation Voltage V I = 3A, I = 6mA 2.0 V BE(sat) C B Switching Characteristics TurnOn Time t V = 30V, I = I = 6mA, 0.2 s on CC B1 B2 Duty Cycle 1% Storage Time t 1.5 s stg Fall Time t 0.6 s fC C B B 4.5k 300 4.5k 300 E E .343 (8.72) .148 (3.72) .059 (1.5) .256 (6.5) .043 (1.1) .406 (10.3) .043 (1.1) .413 (10.5) .032 (0.82) .100 (2.54) .020 (.508) BC E

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NTE ELECTRONICS
NTE ELECTRONICS, INC.

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