NTE249 (NPN) & NTE250 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE249 (NPN) and NTE250 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in complementary general purpose amplifier applications. Features: High DC Current Gain: h = 3500 Typ I = 10A FE C Monolithic Construction with BuiltIn BaseEmitter Shunt Resistors Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V CEO CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V CB EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EB Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A C Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA B Total Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W C D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.857W/C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +200C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +200C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.17C/W thJC Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V I = 100mA, I = 0, Note 1 100 V (BR)CEO C B CollectorEmitter Leakage Current I V = 50V, I = 0 3.0 mA CEO CE E I V = 100V, R = 1k 1.0 mA CER CB BE V = 100V, R = 1k , T = +150C 5.0 mA CB BE A Emitter Cutoff Current I V = 5V, I = 0 5.0 mA EBO BE C Note 1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%Electrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Note 1) DC Current Gain h V = 3V, I = 10A 1000 FE CE C CollectorEmitter Saturation Voltage V I = 10A, I = 40mA 2.5 V CE(sat) C B I = 16A, I = 80mA 4.0 V C B BaseEmitter Voltage V V = 3V, I = 10A 3.0 V BE CE C Note 1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2% NTE249 C B .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane E .312 (7.93) Min .040 (1.02) 1.187 (30.16) Emitter NTE250 .215 (5.45) .665 (16.9) .430 (10.92) C .188 (4.8) R Max B .525 (13.35) R Max Base Collector/Case E