NTE2673 (NPN) & NTE2674 (PNP) Silicon Complementary Transistors General Purpose Power TO220FP Type Package Features: Low Collector Emitter Saturation Voltage: V = 0.5V Typ (I /I = 2A/0.2A) CD(sat) C B Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V CBO Collector Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5A Collector Power Dissipation (T = +25C, Note 2), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25W C D Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Note 1. Single pulse: Pulse Width = 10ms. 2 Note 2. Printed circuit board 1.7mm thick, collector copper plating 1cm or larger. Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit CollectorBase Breakdown Voltage V I = 50A 60 V (BR)CBO C CollectorEmitter Breakdown Voltage V I = 1mA 50 V (BR)CEO C EmitterBase Breakdown Voltage V I = 50A 5 V (BR)EBO E Collector Cutoff Current I V = 40V 1 A CBO CE Emitter Cutoff Current I V = 4V 1 A EBO EB CollectorEmitter Saturation Voltage V I = 2A, I = 200mA, Note 3 0.5 1.0 V CE(sat) C B DC Current Transfer Ratio h I = 500mA, V = 3V, Note 3 60 320 FE C CE Transition Frequency f I = -500mA, V = 5V, f = 30MHz, Note 3 90 MHz T E CE Output Capacitance C V = 10V, I = 0A, f = 1MHz 40 pF ob CB E test Note 3. Measured using pulse current..394 (10.0) .177 (4.5) .276 (7.0) .110 (2.8) .071 (1.8) .669 (17.0) .472 (12.0) BC E .532 (13.5) Min .100 (2.54) .102 (2.6)