NTE2395 MOSFET NCh, Enhancement Mode High Speed Switch TO220 Type Package D Features: Dynamic dv/dt Rating +175 C Operating Temperature Fast Switching G Ease of Paralleling Simple Drive Requirements S Absolute Maximum Ratings: Continuous Drain Current (V = 10V), I GS D T = +25 C (Note 1) .......................................................... 50A C T = +100 C ................................................................. 36A C Pulsed Drain Current (Note 2), I .................................................. 200A DM Power Dissipation (T = +25 C), P ................................................ 150W C D Derate Linearly Above 25 C ............................................... 1.0W/ C GatetoSource Voltage, V ...................................................... 20V GS Single Pulse Avalanche Energy (Note 3), E ....................................... 100mJ AS Peak Diode Recovery dv/dt (Note 4), dv/dt .......................................... 4.5V/ns Operating Junction Temperature Range, T .................................. 55 to +175 C J Storage Temperature Range, T .......................................... 55 to +175 C stg Lead Temperature (During Soldering, 1.6mm from case for 10sec), T ................. +300 C L Mounting Torque (6 32 or M3 Screw) .................................... 10 lbf in (1.1N m) Thermal Resistance, Junction toCase, R ..................................... 1.0 C/W thJC Thermal Resistance, Junction toAmbient, R ................................... 62 C/W thJA Typical Thermal Resistance, Case toSink (Flat, Greased Surface), R ............ 0.5 C/W thCS Note 1. Current limited by the package, (Die Current = 51A). Note 2. Repetitive rating pulse width limited by maximum junction temperature. Note 3. V = 25V, starting T = +25 C, L = 44 H, R = 25 , I = 51A DD J G AS Note 4. I 51A, di/dt 250A/ s, V V , T +175 C SD DD (BR)DSS J Rev. 1013Electrical Characteristics: (T = +25 C unless otherwise specified) J Parameter Symbol Test Conditions Min Typ Max Unit DraintoSource Breakdown Voltage V V = 0V, I = 250 A 60 V (BR)DSS GS D Breakdown Voltage Temp. Coefficient V Reference to +25 C, I = 1mA 0.060 V/ C (BR)DSS D T J Static DraintoSource OnResistance R V = 10V, I = 31A, Note 5 0.028 DS(on) GS D Gate Threshold Voltage V V = V , I = 250 A 2.0 4.0 V GS(th) DS GS D Forward Transconductance g V = 25V, I = 31A, Note 5 15 mhos fs DS D DraintoSource Leakage Current I V = 60V, V = 0V 25 A DSS DS GS V = 48V, V = 0V, T = +125 C 250 A DS GS J GatetoSource Forward Leakage I V = 20V 100 nA GSS GS GatetoSource Reverse Leakage I V = 20V 100 nA GSS GS Total Gate Charge Q I = 51A, V = 48V, V = 10V, 67 nC g D DS GS Note 5 GatetoSource Charge Q 18 nC gs GatetoDrain (Miller) Charge Q 25 nC gd TurnOn Delay Time t 14 ns V = 30V, I = 51A, R = 9.1 , d(on) DD D G R = 0.55 , Note 5 D Rise Time t 110 ns r TurnOff Delay Time t 45 ns d(off) Fall Time t 92 ns f Internal Drain Inductance L Between lead, .250in. (6.0) mm from 4.5 nH D package and center of die contact Internal Source Inductance L 7.5 nH S Input Capacitance C 1900 pF V = 0V, V = 25V, f = 1MHz iss GS DS Output Capacitance C 920 pF oss Reverse Transfer Capacitance C 170 pF rss SourceDrain Ratings and Characteristics: Parameter Symbol Test Conditions Min Typ Max Unit Continuous Source Current (Body Diode) I Note 1 50 A S Pulsed Source Current (Body Diode) I Note 2 200 A SM Diode Forward Voltage V T = +25 C, I = 51A, V = 0V, 2.5 V SD J S GS Note 5 Reverse Recovery Time t 120 180 ns T = +25 C, I = 51A, rr J F di/dt = 100A/ s, Note 5 Reverse Recovery Charge Q 0.53 0.80 C rr Forward TurnOn Time t Intrinsic turnon time is neglegible (turnon is dominated by L +L ) on S D Note 1. Current limited by the package, (Die Current = 51A). Note 2. Repetitive rating pulse width limited by maximum junction temperature. Note 5. Pulse width 300 s duty cycle 2%.