Product Information

NTE2396A

NTE2396A electronic component of NTE

Datasheet
Transistor: N-MOSFET; 100V; 33A; TO220
Manufacturer: NTE
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.6289 ea
Line Total: USD 2.63

51 - Global Stock
Ships to you between
Thu. 23 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
51 - WHS 1


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 1
Multiples : 1
1 : USD 2.548
3 : USD 2.288
9 : USD 1.911
24 : USD 1.807

Read More Specifications

     
Manufacturer
Product Category
Mounting
Case
Kind Of Channel
Type Of Transistor
Drain-Source Voltage
Drain Current
On-State Resistance
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Additional Infomation About Product

ElectronicsThe NTE2396A from NTE Electronics is an N-Channel Field Effect Transistor with a drain-source voltage rating of 100V, a maximum continuous drain/source current of 33A and a TO-220 case style. It is designed to provide low on-state resistance and high-speed switching. It has a maximum drain-gate voltage rating of 20V, a maximum gate-source voltage rating of 4V and a maximum power dissipation rating of 175W. The device is suitable for switching, amplifier and digital logic applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NTE may also be referenced as

NTE ELECTRONICS
NTE ELECTRONICS, INC.

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