X-On Electronics has gained recognition as a prominent supplier of NTGD4167CT1G mosfet across the USA, India, Europe, Australia, and various other global locations. NTGD4167CT1G mosfet are a product manufactured by ON Semiconductor. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

NTGD4167CT1G ON Semiconductor

NTGD4167CT1G electronic component of ON Semiconductor
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See Product Specifications
Part No.NTGD4167CT1G
Manufacturer: ON Semiconductor
Category:MOSFET
Description: MOSFET COMP 30V 2.9A 0.090 TSOP6
Datasheet: NTGD4167CT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.2319 ea
Line Total: USD 695.7

Availability - 11640
Ships to you between
Wed. 05 Jun to Tue. 11 Jun
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
2110 - WHS 1


Ships to you between Wed. 05 Jun to Tue. 11 Jun

MOQ : 1
Multiples : 1
1 : USD 0.3451
10 : USD 0.321
25 : USD 0.318
100 : USD 0.2688
250 : USD 0.2673
500 : USD 0.2543
1000 : USD 0.2411

1326 - WHS 2


Ships to you between
Wed. 12 Jun to Mon. 17 Jun

MOQ : 1
Multiples : 1
1 : USD 0.6762
10 : USD 0.5303
30 : USD 0.4653
100 : USD 0.3865
500 : USD 0.3272
1000 : USD 0.3056

11640 - WHS 3


Ships to you between Wed. 05 Jun to Tue. 11 Jun

MOQ : 3000
Multiples : 3000
3000 : USD 0.2318

2110 - WHS 4


Ships to you between Wed. 05 Jun to Tue. 11 Jun

MOQ : 32
Multiples : 1
32 : USD 0.318
100 : USD 0.2688
250 : USD 0.2673
500 : USD 0.2543
1000 : USD 0.2411

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
Category
Brand Category
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We are delighted to provide the NTGD4167CT1G from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTGD4167CT1G and other electronic components in the MOSFET category and beyond.

The NTGD4167CT1G is a MOSFET COMP 30V 2.9A 0.090 TSOP6 device manufactured by ON Semiconductor. It is a four-channel, low RDS(ON) logic-level gate drive MOSFET. It has a maximum junction temperature of 150°C, a maximum gate-to-source voltage of ±20V, and a maximum drain-source breakdown voltage of 30V. It is designed to support various power supply voltages and the ability to provide fast and balanced gate transitions for improved noise and EMI performance. It is suitable for use in a variety of applications, including appliance, automotive, consumer electronics, and industrial solutions.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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