NTE2649 Silicon NPN Transistor Darlington (Compl to NTE2650) Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EBO Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A C Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A B Collector Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130W A C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Electrical Characteritics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 200V, I = 0 100 A CBO CB E Emitter Cutoff Current I V = 5V, I = 0 100 A EBO EB C CollectorEmitter Breakdown Voltage V I = 30mA 200 V (BR)CEO C DC Current Gain h V = 4V, I = 10A 5000 FE CE C CollectorEmitter Saturation Voltage V I = 10A, I = 10mA 2.5 V CE(sat) C B BaseEmitter Saturation Voltage V I = 10A, I = 10mA 3.0 V BE(sat) C B Transition Frequency f V = 12V, I = 2A 70 MHz T CE E Collector Output Capacitance C V = 10V, I = 0, f = 1MHz 120 pF ob CB ESchematic Diagram C B E .190 (4.82) .615 (15.62) C .787 (20.0) .591 .126 (15.02) (3.22) Dia .787 (20.0) BC E .215 (5.47)