NTE3029B NTE

NTE3029B electronic component of NTE
NTE3029B NTE
NTE3029B Infrared Emitters
NTE3029B  Optoelectronics
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of NTE3029B Infrared Emitters across the USA, India, Europe, Australia, and various other global locations. NTE3029B Infrared Emitters are a product manufactured by NTE. We provide cost-effective solutions for Infrared Emitters, ensuring timely deliveries around the world.

Part No. NTE3029B
Manufacturer: NTE
Category: Infrared Emitters
Description: LED-INFRARED EMITTING DIOD
Datasheet: NTE3029B Datasheet (PDF)
Price (USD)
1: USD 1.8228 ea
Line Total: USD 1.82 
Availability : 74
  
Ship by Tue. 26 Aug to Thu. 28 Aug
QtyUnit Price
1$ 1.8228
5$ 1.4847
15$ 1.3524
41$ 1.2789
100$ 1.2348

Availability 74
Ship by Tue. 26 Aug to Thu. 28 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.8228
5$ 1.4847
15$ 1.3524
41$ 1.2789
100$ 1.2348

   
Manufacturer
Product Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE3029B from our Infrared Emitters category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE3029B and other electronic components in the Infrared Emitters category and beyond.

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ElectronicsThe NTE3029B is a high-power LED-Infrared Emitting Diode manufactured by NTE Electronics. This diode is a gallium-aluminum-arsenide (GaAs) semiconductor material, and has a maximum power dissipation of 250 mW. It is RoHS compliant, and an LED equivalent to the industry standard NTE3029A. It has low power consumption, high luminous intensity, and good light efficiency. This diode is suitable for applications such as signal transmission in remote control units, and infrared communications.

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

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