NTE2915 NTE

NTE2915 MOSFET NChannel, Enhancement Mode High Speed Switch TO220 Type Package D Features: Low Gate toDrain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective C OSS to Simplify Design Fully Characterized Avalanche Voltage and Current G Applications: S High Frequency DC DC Converters Absolute Maximum Ratings: Continuous Drain Current (V = 10V), I GS D T = +25 C .................................................................. 31A C T = +100 C ................................................................. 21A C Pulsed Drain Current (Note 1), I .................................................. 124A DM Power Dissipation (T = +25 C), P ................................................ 200W C D Linear Derating Factor .................................................... 1.3W/ C GateSource Voltage, V ......................................................... 30V GS Peak Diode Recovery dv/dt (Note 2), dv/dt .......................................... 5.9V/ns Single Pulse Avalanche Energy (Note 3), E ....................................... 420mJ AS Avalanche Current (Note 1), I ...................................................... 18A AR Repetitive Avalanche Energy (Note 1), E .......................................... 20mJ AR Operating Junction Temperature Range, T .................................. 55 to +175 C J Storage Temperature Range, T .......................................... 55 to +175 C stg Lead Temperature (During Soldering, 1.6mm from Case, 10 sec max.), T .............. +300 C L Maximum Thermal Resistance, Junction toCase, R ........................... 0.75 C/W thJC Typical Thermal Resistance, Case toSink (Flat, Greased Surface), R ............ 0.5 C/W thCS Maximum Thermal Resistance, Junction toAmbient, R ......................... 62 C/W thJA Note 1. Repetitive rating: pulse width limited by maximum channel temperature. Note 2. I 18A, di/dt 110A/s, V V , T +175 C. SD DD (BR)DSS J Note 3. Starting T = +25 C, L = 3.8mH, R = 25 , I = 18A. J G AS Rev. 1013Electrical Characteristics: (T = +25 C unless otherwise specified) J Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics DraintoSource Breakdown Voltage V V = 0V, I = 250 A 200 V (BR)DSS GS D Breakdown Voltage Temperature Coefficient V / T Reference to +25 C, I = 1mA 0.25 V/ C (BR)DSS J D Static Drain-to-Source On-Resistance R V = 10V, I = 18A, Note 4 0.082 DS(on) GS D Gate Threshold Voltage V V = V , I = 250 A 3.0 5.5 V GS(th) DS GS D DrainSource Leakage Current I V = 200V, V = 0V 25 A DSS DS GS V = 160V, V = 0V, T = +150 C 250 A DS GS J GateSource Leakage Current I V = 30V 100 nA GSS GS Dynamic Characteristics Forward Transconductance g V = 50V, I = 18A 17 S fs DS D Total Gate Charge Q I = 18A, V = 160V, 70 110 nC g D DS V = 10V, Note 4 GS GatetoSource Charge Q 18 27 nC gs GatetoDrain (Miller) Charge Q 33 49 nC gd TurnOn Delay Time t V = 100V, I = 18A, 16 ns d(on) DD D R = 2.5 , R = 4.5 , Note 4 G D Rise Time t 38 ns r TurnOff Delay Time t 26 ns d(off) Fall Time t 10 ns f Input Capacitance C V = 0V, V = 25V, f = 1MHz 2370 pF iss GS DS Output Capacitance C 390 pF oss Reverse Transfer Capacitance C 78 pF rss Output Capacitance C V = 0V, V = 1V, f = 1MHz 2860 pF oss GS DS V = 0V, V = 160V, f = 1MHz 150 pF GS DS Effective Output Capacitance C eff. V = 0V, V = 0V to 160V, 170 pF oss GS DS Note 5 Note 4. Pulse width 300 s duty cycle 2%. Note 5. C eff. is a fixed capacitance that gives the same charging time as C while V is rising OSS OSS DS from 0 to 80% V . DSS Source Drain Ratings and Characteristics: Parameter Symbol Test Conditions Min Typ Max Unit Continuous Source Current (Body Diode) I 31 A S Pulsed Source Current (Body Diode) I Note 1 124 A SM Diode Forward Voltage V I = 18A, V = 0V, T = +25 C, Note 4 1.3 V SD S GS J Reverse Recovery Time t T = +25 C, I = 18A, 200 300 ns rr J F di/dt = 100A/ s, Note 4 Reverse Recovery Charge Q 1.7 2.6 C rr Forward TurnOn Time t Intrinsic turnon time is negligible (turnon is dominated by L + L ) on S D Note 1. Repetitive rating: pulse width limited by maximum channel temperature. Note 4. Pulse width 300 s duty cycle 2%.