Product Information

NTE5374

NTE5374 electronic component of NTE

Datasheet
Stud thyristor; 600V; 275A; 200mA; TO93

Manufacturer: NTE
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 228.3863 ea
Line Total: USD 228.39

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1
1 : USD 228.3863
10 : USD 186.0732
25 : USD 173.664
50 : USD 162.81

0 - WHS 2


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1
1 : USD 241.0981

     
Manufacturer
Product Category
Case
Type Of Semiconductor Component
Max Load Current
Max Off-State Voltage
Gate Current
LoadingGif

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NTE5374 & NTE5375 Silicon Controlled Rectifier (SCR) for High Speed Switching, 275 Amp, TO93 Maximum Ratings and Electrical Characteristics: (T = +125C unless otherwise specified) J Repetitive Peak Voltages, V , V DRM RRM NTE5374 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE5375 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V Non Repetitive Peak OffState Voltage, V DSM NTE5374 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE5375 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V Non Repetitive Peak Reverse Blocking Voltage, V RSM NTE5374 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V NTE5375 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1300V Average On State Current (T = +85C, half sinewave), I C T(AV) NTE5374 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 195A NTE5375 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175A RMS On State Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 355A T(RMS) Continuous On State Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 355A T Peak One Cycle Surge (Non Repetitive) On State Current, I TSM (t = 10ms, 60% V reapplied) RRM NTE5374 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4700A NTE5375 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3250A (t = 10ms, V 10V) R NTE5374 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5170A NTE5374 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3575A 2 Maximum Permissible Surge Energy, I t (t = 10ms, V 10V) R 2 NTE5374 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 134000A sec 2 NTE5375 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63900A sec (t = 3ms, V 10V) R 2 NTE5374 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98000A sec 2 NTE5375 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47000A sec Peak Forward Gate Current (Anode Positive with Respect to Cathode), I . . . . . . . . . . . . . . . 18A FGM Peak Forward Gate Voltage (Anode Positive with Respect to Cathode), V . . . . . . . . . . . . . . 12V FGM Peak Reverse Gate Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V RGM Average Gate Power, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W G(AV) Peak Gate Power (100s Pulse Width), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60W GMRate of Rise of OffState Voltage (To 80% V , Gate OpenCircuit), dv/dt . . . . . . . . . . . 200V/s DRM Maximum Ratings and Electrical Characteristics (Contd): (T = +125C unless otherwise specified) J Rate of Rise of On State Current, di/dt (Gate Drive 20V, 20 with t 1s, Anode voltage 80% V ) r DRM Repetitive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500A/s Non Repetitive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000A/s Peak On State Voltage (I = 600A), V TM TM NTE5374 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8V NTE5375 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.074V Forward Conduction Threshold Voltage, V O NTE5374 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4V NTE5375 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.55V Forward Conduction Slope Resistance, r NTE5374 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.67m NTE5375 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.87m Repetitive Peak OffState Current (At Rated V ), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA DRM DRM Repetitive Peak Reverse Current (At Rated V ), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA RRM RRM Maximum Gate Current Required to Fire All Devices (T = +25C, V = 6V, I = 1A), I . . 200mA J A A GT Maximum Gate Voltage Required to Fire All Devices (T = +25C, V = 6V, I = 1A), V . . . . . 3V J A A GT Maximum Holding Current (T = +25C, V = 6V, I = 1A), I . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA J A A H Maximum Gate Voltage Which Will Not Trigger Any Device, V . . . . . . . . . . . . . . . . . . . . . . . 0.25V GD Typical Stored Charge (I = 300A, dir/dt 20A/s, V = 50V, 50% Chord Value), Q TM RM rr NTE5374 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25C NTE5375 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45C Maximum Circuit Commutated Turn Off Time, t q (I = 300A, dir/dt = 20A/s, V = 50V, dv/dt = 200V/s to 80% V ) TM RM DRM NTE5374 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10s NTE5375 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20s Operating Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +125C C Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +150C stg Thermal Resistance, Junction toCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.12C/W thJC

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
NTE ELECTRONICS
NTE ELECTRONICS, INC.

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