Product Information

NTE5371

NTE5371 electronic component of NTE

Datasheet
Stud thyristor; 600V; 125A; 150mA; TO94

Manufacturer: NTE
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 163.4512 ea
Line Total: USD 163.45

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1
1 : USD 163.4512
10 : USD 133.164
25 : USD 124.2864
50 : USD 116.5212

0 - WHS 2


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1
1 : USD 172.5463

     
Manufacturer
Product Category
Case
Type Of Semiconductor Component
Max Load Current
Max Off-State Voltage
Gate Current
LoadingGif

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NTE5371 & NTE5372 Silicon Controlled Rectifier (SCR) for High Speed Switching 125 Amp, TO94 Features: All Diffused Design Center Amplifying Gate High Surge Current Capability Low Thermal Impedance High Speed Performance Applications: Inverters Choppers Induction Heating All Types of Force Commutated Converters Maximum Ratings and Electrical Characteristics: Max. Repetitive Peak Voltages, V , V RRM DRM NTE5371 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE5372 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V Max. Non Repetitive Peak Voltage, V RSM NTE5371 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V NTE5372 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1300V Average On State Current (180 Conduction, Half Sine Wave, T = +85C), I . . . . . . . . . . 85A C T(AV) Max. RMS OnState Current (DC at T = +77C), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135A C T(RMS) Max. Peak One HalfCycle NonRepetitive Surge Current (T = +125C, Sinusoidal Half Wave), I J TSM (No Voltage Reapplied) (t = 10ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2450A (t = 8.3ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2560A (100% V Reapplied) RRM (t = 10ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2060A (t = 8.3ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2160A 2 Max. Permissible Surge Energy (T = +125C, Sinusoidal Half Wave), I t J (No Voltage Reapplied) 2 (t = 10ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30KA s 2 (t = 8.3ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27KA s (100% V Reapplied) RRM 2 (t = 10ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21KA s 2 (t = 8.3ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19KA sMaximum Ratings and Electrical Characteristics (Contd): 2 2 2 Max. I t for Fusing (t = 0.1 to 10ms, No Voltage Reapplied), I t . . . . . . . . . . . . . . . . . . . 300KA s Max. Peak OnState Voltage (I = 300A, T = +125C, t = 10ms Sine Wave Pulse), V . . 2.15V TM J p TM Threshold Voltage (T = +125C), V J T(TO) Low Level (16.7% x x I < I < x I ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.46V T(AV) T(AV) High Level (I > x I ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.52V T(AV) Forward Slope Resistance (T = +125C), r J t Low Level (16.7% x x I < I < x I ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.32 T(AV) T(AV) High Level (I > x I ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.34 T(AV) Max. Holding Current (T = +25C, I > 30A), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA J T H Typical Latching Current (T = +25C, V = 12V, R = 6, I = 1A), I . . . . . . . . . . . . . . . . . . 1000mA J A a G L Max. Non Repetitive Rate of Rise of On State Current (T = +25C, V = Rated V ), di/dt J DRM DRM (I = I = 2 x di/dt) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000A/s TM TM Typical Delay Time (T = +125C, V = Rated V ), t J DRM DRM d (I = 50A DC, t = 1s, Resistive Load, Gate Pulse: 10V, 5 Source) . . . . . . . . . . 0.80s TM p Max. TurnOff Time, t q (T = +125C, I = 100A, Commutating di/dt = 10A/s, V = 50V, t = 200s) J TM R p NTE5371 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 to 20s NTE5372 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 to 30s Max. Critical Rate of Rise of OffState Voltage, dv/dt (T = +125C, Linear To 80% V ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V/s J DRM Max. Peak Reverse and Off State Leakage Current, I , I RRM DRM (T = +125C, Rated V /V Applied) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA J DRM RRM Max. Peak Gate Power (T = +125C, f = 50Hz, d% = 50), P . . . . . . . . . . . . . . . . . . . . . . . . . . 40W J GM Max. Average Gate Power (T = +125C, f = 50Hz, d% = 50), P . . . . . . . . . . . . . . . . . . . . . . 5W J G(AV) Max. Peak Positive Gate Current (T = +125C, t 5ms), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A J p GM Max. Peak Gate Voltage (T = +125C, t 5ms), V J p GM Positive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Negative . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Max. DC Gate Current Required to Trigger (T = +25C, V = 12V, R = 6), I . . . . . . . . . 200mA J A a GT Max. DC Gate Voltage Required to Trigger (T = +25C, V = 12V, R = 6), V . . . . . . . . . . . . 3V J A a GT Max. DC Gate Current not to Trigger (T = +125C, Rated V Applied), I . . . . . . . . . . . . . 20mA J DRM GD Max. DC Gate Voltage not to Trigger (T = +125C, Rated V Applied), V . . . . . . . . . . . 250mV J DRM GD Maximum Operating Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +125C J Maximum Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +150C stg Maximum Thermal Resistance, Junction toCase (DC Operation), R . . . . . . . . . . . . . 0.195K/W thJC Maximum Thermal Resistance, Case toHeatsink, R thCS (Mounting Surface Smooth, Flat and Greased) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.08K/W

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
NTE ELECTRONICS
NTE ELECTRONICS, INC.

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