NTE5541 thru NTE5548 Silicon Controlled Rectifier (SCR) 35 Amp, TO48 Description: The NTE5541 thru NTE5548 are silicon controlled rectifiers (SCR) packaged in a TO48 type case designed for industrial and consumer applications such as power supplies battery chargers temper- ature, motor, light and welder controls. Absolute Maximum Ratings: Repetitive Peak OffState Voltage (T = +100C) V J DRM NTE5541 .................................................................... 50V NTE5543 ................................................................... 200V NTE5544 ................................................................... 300V NTE5545 ................................................................... 400V NTE5546 ................................................................... 500V NTE5547 ................................................................... 600V NTE5548 ................................................................... 800V Repetitive Peak Reverse Voltage (T = +100C) V J RRM NTE5541 .................................................................... 50V NTE5543 ................................................................... 200V NTE5544 ................................................................... 300V NTE5545 ................................................................... 400V NTE5546 ................................................................... 500V NTE5547 ................................................................... 600V NTE5548 ................................................................... 800V RMS OnState Current (T = +75C), I ........................................... 35A C (RMS) Peak Surge (Non Repetitive) On State Current (One Cycle at 50Hz or 60Hz), I ....... 300A TSM Peak GateTrigger Current (3 s Max), I ........................................... 20A GTM Peak Gate Power Dissipation (I I for 3s Max), P ........................... 20W GT GTM GM Average Gate Power Dissipation, P .......................................... 500mW G(AV) Operating Temperature Range, T ........................................ 40 to +150C oper Storage Temperature Range, T .......................................... 40 to +150C stg Typical Thermal Resistance, Junction toCase, R .............................. 1.4 C/W thJC Note 1. NTE5541, NTE5542, NTE5544, and NTE5546 are a discontinued devices and no longer available. Rev. 513Electrical Characteristics: (At Maximum Ratings and Specified Case Temperatures) Parameter Symbol Test Conditions Min Typ Max Unit Peak OffState Current I , V & V = Max Rating, 2.0 mA DRM DRM RRM I T = +100C, Gate Open RRM J Maximum OnState Voltage (Peak) I T = +25C 50 mA HO C DC Gate Trigger Current I Anode Voltage = 12V, R = 30, 30 mA GT L T = +25C C DC Gate Trigger Voltage V Anode Voltage = 12V, R = 30, 2.0 V GT L T = +25C C Gate Controlled TurnOn Time t I = 150mA 2.5 s gt GT Critical Rate of Rise of dv/dt Gate Open, T = +100C 100 V/s C OffState Voltage (Critical) .562 (14.28) Max Gate Cathode 1.193 (30.33) Max .200 (5.08) Max .453 (11.5) Anode Max 1/428 UNF2A