Product Information

NTE5599

NTE5599 electronic component of NTE

Datasheet
Hockey-puck thyristor; 1.2kV; 1.2kA; 200mA; Ifsm:24.65kA; 2,9

Manufacturer: NTE
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 474.0125 ea
Line Total: USD 474.01

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 474.0125
10 : USD 390.0446
25 : USD 364.0371
50 : USD 341.2834

0 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 524.2711
10 : USD 484.64
100 : USD 483.8437

0 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 496.7324

     
Manufacturer
Product Category
Case
Type Of Semiconductor Component
Max Load Current
Max Forward Impulse Current
Turn-On Time
Max Off-State Voltage
Gate Current
Load Current
LoadingGif

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NTE5598 & NTE5599 Silicon Controlled Rectifier (SCR) 1800 Amp RMS, 2.9 Dia. Hockey Puck Features: Low On State Voltage High di/dt Capability High dv/dt Capability 2 Excellent Surge and I t Ratings Applications: Power Supplies Motor Control Absolute Maximum Ratings: Repetitive Peak Voltages, V , V RRM DRM NTE5598 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE5599 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V Non Repetitive Peak Reverse Blocking Voltage, V RSM NTE5598 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V NTE5599 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1300V Average On State Current (180 Sine Wave), I T(AV) T = +55C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1780A C T = +85C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200A C RMS On State Current, I T(RMS) T = +55C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2790A C T = +85C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1880A C Peak One Cycle Surge On State Current (Non Repetitive), I TSM 60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27000A 50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24650A Rate of Rise of On State Current, di/dt Repetitive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150A/s Non Repetitive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300A/s 2 2 2 I t for Fusing fo One Cycle (60Hz), I t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3040000A s Peak Gate Power Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16W GM Average Gate Power Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3W G(av) Operating Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +125C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +150C stg Mounting Force . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5000 to 5500 lb. (2270 to 2500 kg.) Maximum Thermal Resistance (T = +25C, Double Sided Cooling) J JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.023C/W th(jc) Case toSink, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.0075C/W th(cs) Rev. 910Electrical Characteristics: (T = +25C unless otherwise specified) J Max. Repetitive Peak Reverse Leakage Current (T = +125C, V = V ), I . . . . . . . . . 75mA J R RRM RRM Max. Repetitive Peak Forward Leakage Current (T = +125C, V = V ), I . . . . . . . . . 75mA J D DRM DRM Max. Peak OnState Voltage (I = 1500A Peak, Duty Cycle < 0.1%), V . . . . . . . . . . . . . . 1.35V TM TM Max. Threshold Voltage, Low Level (T = +125C, I = 15%, I to I ), V . . . . . 0.60559V J T(av) T(av) (TO)1 Max. Slope Resistance, Low Level (T = +125C, I = 15%, I to I ), r . . . . . . . 0.2681m J T(av) T(av) T1 Max. Threshold Voltage, High Level (T = +125C, I = I to I ), V . . . . . . . . . . 0.64284V J T(av) TSM (TO)2 Max. Slope Resistance, High Level (T = +125C, I = I to I ), r . . . . . . . . . . . . 0.1906m J T(av) TSM T2 Max. V Coefficients, Low Level (T = +125C, I = 15%, I to I ) TM J T(av) T(av) A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.55126 1 B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.21303 1 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.433E 04 1 D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.003097 1 Max. V Coefficients, High Level (T = +125C, I = I to I ) TM J T(av) TSM A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5287 1 B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.457 1 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.001238 1 D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.43650 1 Typical TurnOn Time (I = 1000A, V = 450V), t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3s TM D on Typical TurnOff Time, t q (T = +125C, I = 250A, di /dt = 50A/s Reapplied, dv/dt = 20V/s Linear to 80% V ) 350s J T R DRM Min. Critical dv/dt Exponential to V (T = +125C), dv/dt . . . . . . . . . . . . . . . . . . . . . . 300V/s DRN=M J Max. Gate Trigger Current (T = +25C, V = 12V), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA J D GT Max. Gate Trigger Voltage (T = +25C, V = 12V), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V J D GT Max. NonTriggering Gate Voltage (T = +125C, V = V ), V . . . . . . . . . . . . . . . . . . . 0.15V J D DRM GDM Peak Forward Gate Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A GTM Peak Reverse Gate Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V GRM 12.000 (304.8) Typ .145 (3.69) Dia x .090 (2.29) Deep For No.6 Screw 2.900 (73.66) Max Cathode Marking 1.855 (47.12) Cathode Potential Max .050 (1.27) Min (Red) 1.070 (27.18) Max Gate (White) .050 (1.27) Min Anode 1.855 (47.12) Max 2.640 (67.06) Max

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
NTE ELECTRONICS
NTE ELECTRONICS, INC.

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