Product Information

NTE5554

NTE5554 electronic component of NTE

Datasheet
Thyristor; 400V; 25A; 30mA; THT; TO220

Manufacturer: NTE
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 8.055 ea
Line Total: USD 80.55

0 - Global Stock
MOQ: 10  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 10
Multiples : 1
10 : USD 8.055
50 : USD 5.184
100 : USD 4.7844
200 : USD 4.4388
500 : USD 4.1472

0 - WHS 2


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1
Multiples : 1
1 : USD 16.002
25 : USD 14.931
50 : USD 13.676
100 : USD 12.1943
250 : USD 11.2795

0 - WHS 3


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1
Multiples : 1
1 : USD 8.3722
3 : USD 6.079
8 : USD 5.7533

     
Manufacturer
Product Category
Brand
Peak Repetitive Off-State Voltage Vdrm
Gate Trigger Current Max Igt
Current It Av
On State Rms Current Itrms
Thyristor Case Style
No. Of Pins
LoadingGif

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NTE5550 thru NTE5558 Silicon Controlled Rectifier (SCR) 25 Amp, TO220 Description: The NTE5550 thru NTE5558 SCRs are designed primarily for half wave AC control applications, such as motor controls, heating controls and power supply crowbar circuits. Features: Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability. Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat Dissipation and Durability. Blocking Voltage to 800 Volts 300A Surge Current Capability Absolute Maximum Ratings: Peak Reverse Blocking Voltage (Note 1), V RRM NTE5550 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V NTE5552 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5554 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5556 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE5558 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Forward Current (T = +85C), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A C T(RMS) (All Conduction Angles), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A T(AV) Peak NonRepetitive Surge Current (8.3ms), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300A TSM (1/2 Cycle, Sine Wave, 1.5ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350A Forward Peak Gate Power, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W GM Forward Average Gate Power, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W G(AV) Forward Peak Gate Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A GM Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +125C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +150C stg Thermal Resistance, Junction toCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5C/W thJC Note 1. V for all types can be applied on a continuous dc basis without incurring damage. RRM Ratings apply for zero or negative gate voltage. Devices should not be tested for block- ing capability in a manner such that the voltage supplied exceeds the rated blocking voltage.Electrical Characteristics: (T = +25C unless otherwise noted.) C Parameter Symbol Min Typ Max Unit Peak Forward Blocking Voltage, (T = +125C) V V J DRM NTE5550 50 NTE5552 200 NTE5554 400 NTE5556 600 NTE5558 800 Peak Forward or Reverse Blocking Current, I , I DRM RRM (Rated V or V)T = +25C 10 A DRM RRM J T = +125C 2 mA J Forward ON Voltage, (I = 50A, Note 2) V 1.8 V TM TM Gate Trigger Current (Continuous DC), T = +25C I 40 mA C GT (Anode Voltage = 12Vdc, R = 100) T = 40C 25 75 L C Gate Trigger Voltage (Continuous DC) V 1 1.5 V GT (Anode Voltage = 12Vdc, R = 100, T = 40C) L C Gate NonTrigger Voltage V 0.2 V GD (Anode Voltage = Rated V , R =100, T = +125C) DRM L J Holding Current I 35 40 mA H (Anode Voltage = 12Vdc, T = 40C) C TurnOn Time t 1.5 2 s gt (I = 25A, I = 50mAdc) TM GT Turn Off Time (V = rated voltage) t s DRM q (I =25A, I = 25A) 15 TM R (I =25A, I = 25A, T = +125C) 35 TM R J Critical Rate of Rise of OffState Voltage dv/dt 50 V/s (Gate Open, Rated V , Exponential Waveform) DRM Note 2. Pulse Test: Pulse Width 300s, Duty Cycle 2%. .420 (10.67) Max .110 (2.79) .500 .147 (3.75) (12.7) Dia Max Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Cathode Gate Anode/Tab .100 (2.54)

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
NTE ELECTRONICS
NTE ELECTRONICS, INC.

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