NTE5552I, NTE5554I, NTE5556I, NTE5558I Silicon Controlled Rectifier (SCR) 25 Amp, TO220AB Isolated Tab Description: The NTE5552 I thru NTE5558 I are 25 Amp SCRs designed primarily for half wave AC control applications, such as motor controls, overvoltage crowbar protection, capacitive discharge ignition, voltage regulation, and welding equipment. Features: Suitable for General Purpose AC Switching I 40mA Max. GT Isolated Tab Absolute Maximum Ratings: (T = +25 C unless otherwise specified) A Repetitive Peak OffState Voltage, V DRM NTE5552I ................................................................. 200V NTE5554I ................................................................. 400V NTE5556I ................................................................. 600V NTE5558I ................................................................. 800V Peak Reverse Blocking Voltage, V RRM NTE5552I ................................................................. 200V NTE5554I ................................................................. 400V NTE5556I ................................................................. 600V NTE5558I ................................................................. 800V Maximum Peak Reverse Gate Voltage, V ........................................... 5V RGM RMS OnState Current (Full Sine Wave, T = +75 C), I ........................... 25A C T(RMS) Average On State Current (T = +75 C), I ........................................ 16A C T(AV) Non Repetitive Surge Peak On State Current (Full Cycle, T Initial = +25 C), I J TSM F = 50Hz ................................................................... 320A F = 60Hz ................................................................... 350A 2 2 2 I t Value for Fusing (t = 10ms), I t ................................................ 510A s p Critical Rate of Rise of On State Current (I = 2 x I , t < 100ns, T = +125 C), di/dt G GT r J NTE5552I, NTE5554I, NTE5556I ....................................... 100A/ s NTE5558I ............................................................... 50A/ s Forward Peak Gate Current (t = 20 s, T = +125 C), I p J GM NTE5552I, NTE5554I, NTE5556I2............................................A NTE5558I ................................................................... 4A Average Gate Power Dissipation (T = +125 C), P ................................. 1W J G(AV) Isolation Voltage, V ........................................................ 2500V ISO RMS Rev. 514Absolute Maximum Ratings (Contd): (T = +25 C unless otherwise specified) A Operating Junction Temperature Range, T ................................. 40 to +125 C J Storage Temperature Range, T ......................................... 40 to +150 C stg Thermal Resistance, Junction toCase, R ..................................... 1.9 C/W thJC Thermal Resistance, Junction toAmbient, R ................................... 60 C/W thJA Electrical Characteristics: (T = +25 C unless otherwise noted.) C Parameter Symbol Min Typ Max Unit Gate Trigger Current (V = 12V, R = 30 ) I 40 mA D L GT Gate Trigger Voltage (V = 12V, R = 30 ) V 1.3 V D L GT Gate NonTrigger Voltage V 0.2 V GD (V = Rated V , R =3.3k , T = +125 C) D DRM L J Holding Current (I = 500mA, Gate Open) I 50 mA T H Latching Current (I = 1.2 I ) I 90 mA G GT L Critical Rate of Rise of OffState Voltage dv/dt 1000 V/ s (V = 67% V , Gate Open, T = +125 C) D DRM J Forward ON Voltage NTE5558I (I = 32A, t = 380 s, T = +25 C) V 1.6 V TM p J TM 1.6 V All Other Devices (I = 50A, t = 380 s, T = +25 C) TM p J Peak Forward or Reverse Blocking Current, I , I DRM RRM (Rated V or V)T = +25 C 5 A DRM RRM J T = +125 C 4 mA J .052 (1.32) Max .408 (10.36) .190 (4.83) Max Max .108 (2.74) Isol .153 (3.89) Dia Max .512 (13.0) .127 Max (3.23) Max .503 (12.78) Min .037 (0.94) Max Gate Cathode Anode .100 (2.54)