NTE56004 thru NTE56010 TRIAC, 15 Amp The NTE56004 thru NTE56010 series of TRIACs are designed primarily for fullwave AC control ap- plications, such as solidstate relays, motor controls, heating controls and power supplies or wherev- er fullwave silicon gate controlled solidstate devices are needed. TRIAC type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. Features: Blocking Voltage from 200 to 800 Volts All Diffused and Glass Passivated Junctions Small, Rugged, TO220 package for Low Thermal Resistance, High Heat Dissipation and Durability Gate Triggering specified in Four Quadrants Absolute Maximum Ratings: Peak Repetitive OffState Voltage, (T = 40 to 125C), V J DRM NTE56004 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE56006 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE56008 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE56010 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Peak Gate Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V GM OnState Current RMS (Full Cycle Sine Wave 50 to 60Hz,T = +90C), I . . . . . . . . . . . 15A C T(RMS) 2 2 Circuit Fusing (t = 8.3ms) I t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93A s Peak Surge Current (One Full Cycle, 60Hz, T = +80C), I C TSM Preceded and followed by rated current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150A Peak Gate Power (T = +80C, Pulse Width = 2 s), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W C GM Average Gate Power (T = +80C, t = 8.3ms), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW C G(AV) Peak Gate Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A GM Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +125C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +150C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2C/W thJCElectrical Characteristics (T = 25C, and either polarity of MT2 to MT1 Voltage, unless C otherwise noted) Characteristics Symbol Min Typ Max Unit Peak Forward or Reverse Blocking Current I , DRM (Rated V , or V , Gate open) T =25C I 10 A DRM RRM J RRM T =125C 2 mA J Peak OnState Voltage V 1.3 1.6 Volts TM (I = 21 A Peak Pulse Width = 1 to 2ms, TM Duty Cycle 2%) Gate Trigger Current (Continuous dc) I mA GT (V = 12Vdc, R = 100 Ohms) D L MT2(+) G(+), MT2(+) G(), MT2() G() 50 MT2(), G(+) 75 Gate Trigger Voltage (Continuous dc) V Volts GT (V = 12Vdc, R = 100 Ohms) D L MT2(+) G(+), MT2(+) G() 0.9 2 MT2() G() 1.1 2 MT2() G(+) 1.4 2.5 (V = Rated V , R = 10k Ohms, T = 110C) D DRM L J MT2(+) G(+), MT2() G(), MT2(+) G() 0.2 MT2() G(+) 0.2 Holding Current (Either Direction) I 6 40 mA H (V = 12Vdc, I = 200mA, Gate Open) D T TurnOn Time t 1.5 s gt (V = Rated V , I = 17A) D DRM TM (I = 120mA, Rise Time = 0.1 s, Pulse Width = 2 s) GT Critical Rate of Rise of Commutation Voltage dv/dt(c) 5 V/ s (V = Rated V , I = 21 A, Commutating D DRM TM di/dt = 8A/ms, Gate Unenergized, T = 80C) C .420 (10.67) Max .110 (2.79) MT 2 .147 (3.75) .500 (12.7) Dia Max Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max MT Gate 1 .100 (2.54) MT 2