NTE5600 thru NTE5607 TRIAC, 4 Amp Description: The NTE5600 through NTE5607 TRIACs are designed primarily for fullwave AC control applications such as light dimmers, motor controls, heating controls and power supplies or wherever fullwave silicon gate controlled solidstate devices are needed. TRIAC type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. Features: 2 Mode Gate Triggering Blocking Voltages to 600V All Diffused and Glass Passivated Junctions for Greater Parameters Uniformity and Stability Absolute Maximum Ratings: Repetitive Peak OffState Voltage (T = +110C, Note 1), V C DRM NTE5600 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V NTE5601 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V NTE5602 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V NTE5603 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5604 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V NTE5605 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5606 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V NTE5607 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V RMS OnState Current (T = +85C), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A C T(RMS) Peak Surge Current (One Full Cycle, 60Hz, T = 40 to +110C), I . . . . . . . . . . . . . . . . . . . 30A J TSM 2 2 Circuit Fusing (t = 8.3ms), I t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.7A s Peak Gate Power, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W GM Average Gate Power, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W G(AV) Peak Gate Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V GM Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +110C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +150C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5C/W thJC Thermal Resistance, JunctiontoAmbient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75C/W thJA Mounting Torque (632 Screw, Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 in. lb. Note 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the rated block- ing voltage. Note 2. Torque rating applies with the use of a compression washer. Mounting torque in excess of 8 in. lb. does not appreciably lower casetosink thermal resistance. MT and heatsink con- 2 tact pad are common.Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit I , Rated V or V , Gate Open, 10 A Peak Forward or Reverse DRM DRM RRM Blocking Current I T = +25C RRM J Rated V or V , Gate Open, 2 mA DRM RRM T = +110C J OnState Voltage (Either Direction) V I = 6A Peak 2 V TM TM Peak Gate Trigger Voltage V GT MT (+), G (+) MT (), G () Main Terminal Voltage = 12V, 1.4 2.5 V 2 2 MT (+), G () MT (), G (+) R = 100 , T = 40C 2 2 L J Peak Gate Trigger Voltage V GT MT (+), G (+) MT (), G () Main Terminal Voltage = Rated V , 0.2 V 2 2 DRM MT (+), G () MT (), G (+) R = 10k , T = +110C 2 2 L J Holding Current (Either Direction) I Main Terminal Voltage = 12V, Gate Open, 70 mA H T = 40C, Initiating Current = 1A J Main Terminal Voltage = 12V, Gate Open, 30 mA T = +25C J TurnOn Time (Either Direction) t I = 14A, I = 100mA 1.5 s on TM GT Blocking Voltage Application dv/dt Rated V , Gate Open, T = +85C 5 V/ s DRM J Rate at Commutation Gate Trigger Current I Main Terminal Voltage = 12V, 30 mA GT Quads I & III R = 100, T = +25C L J Main Terminal Voltage = 12V, 60 mA R = 100, T = 40C L J .330 (8.38) Max .175 (4.45) Max .450 (11.4) Max .118 (3.0) Dia .655 (16.6) Max .030 (.762) Dia MT MT G 1 2 .090 (2.28) .130 (3.3) Max