NTE56030 & NTE56031 TRIAC, 40 Amp TO218 Isolated Tab Description: The NTE56030 and NTE56031 are 40 Amp TRIACs in a TO218 type package with an isolated tab designed to be driven directly with IC and MOS devices. Applications: Phase Control Power Tools Static Switching Solenoid Controls: Dishwashers Light Dimming Washing Machines Motor Speed Control Kitchen Equipment Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Peak Repetitive OffState Voltage (I = 50mA), V GT DRM NTE56030 ................................................................. 400V NTE56031 ................................................................. 600V RMS OnState Current (T = +95C, Full Sine Wave), I (RMS) .......................... 40A C T Non Repetitive Surge Peak On State Current (Full Cycle, Initial T = +25C), I J TSM 50Hz ...................................................................... 400A 60Hz ...................................................................... 420A 2 2 2 I t Value for Fusing (t = 10ms), I t ............................................... 1000A s p Critical Rate of Rise of On State Current (I = 2 x I , t < 100ns, T = +125C), di/dt .... 50A/ s G GT r J Peak Gate Current (t = 20s, T = +125C), I ........................................ 8A p J GM Average Gate Power Dissipation (T = +125C), P ................................. 1W J G(AV) Isolation Voltage, V ........................................................ 2500V ISO RMS Operating Junction Temperature Range, T .................................. 40 to +125C J Storage Temperature Range, T .......................................... 40 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) J Parameter Symbol Test Conditions Min Typ Max Unit Peak OffState Current I T = +25C, V = V 5 A DRM J DRM RRM Peak Reverse Current I T = +125C, V = V 5 3 mA RRM J DRM RRM Gate Trigger Current I V = 12V, R = 30, Note 1 GT D L Quadrant I, II, III 50 mA Quadrant IV 100 mA Note 1. Minimum I is guaranteed at 5% of I max. GT GT Note 2. For both polarities of A2 referenced to A1. Rev. 215Electrical Characteristics (Contd): (T = +25C unless otherwise specified) J Parameter Symbol Test Conditions Min Typ Max Unit Gate Trigger Voltage V V = 12V, R = 30 1.3 V GT D L Gate NonTrigger Voltage V V = V , T = +125C, R = 3.3k 0.2 V GD D DRM J L Holding Current I I = 100mA, Note 2 80 mA H T Latching Current I I = 1.2I L G GT Quadrant I, III, IV 75 mA Quadrant II 160 mA Critical Rate of Rise of dv/dt V = 67%V , Gate Open, T = +125C, 500 V/s D DRM J OffState Voltage Note 2 Critical Rate of Rise of dv/dt(c) di/dt(c) = 13.3A/ms, T = +125C, Note 2 10 V/s J Commutation Voltage Peak OnState Voltage V I = 35A, t = 380s, Note 2 1.55 V TM TM p Threshold Voltage V T = +125C, Note 2 0.85 V TO J Dynamic Resistance r T = +125C, Note 2 10 m D J Note 1. Minimum I is guaranteed at 5% of I max. GT GT Note 2. For both polarities of A2 referenced to A1. .200 .626 (15.92) (5.08) Max .166 (4.23) Max Dia Max .050 (1.27) Isol .147 (3.76) .815 (20.72) .490 (12.44) MT MT Gate 1 2 .500 (12.7) Min .215 (5.47) .110 (2.79)