NTE5650 thru NTE5653 TRIAC 100V , 2.5A RM Description: The NTE5650 through NTE5653 sensitive gate TRIACs are designed to be driven directly with IC and MOS devices. These devices features a voidfree glass passivated chip and are hermetically sealed in TO5 outline cans. The NTE5650 through NTE5653 are bidirectional triode thyristors and may be switched from off state to conduction for either polarity of applied voltage with positive or negative gatetrigger current and are designed for control applications in lighting, heating, cooling and static switching relays. Absolute Maximum Ratings: Repetitive Peak OffState Voltage (T = +90C, Gate Open, Note 1), V J DROM NTE5650 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V NTE5651 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5652 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5653 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V RMS OnState Current (T = +75C and Conduction Angle of 360), I . . . . . . . . . . . . . . . 3A C T(RMS) Peak Surge (NonRepetitive) OnState Current (OneCycleat 50Hz or 60Hz), I . . . . . . . . 30A TSM Peak GateTrigger Current (3 sec, Max.), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A GTM Peak GatePower Dissipation (I I for 3 sec. Max.), P . . . . . . . . . . . . . . . . . . . . . . . . 20W GT GTM GM Average GatePower Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2W G(AV) Operating Temperature Range (T ), T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +90C C opr Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +150C stg Typical Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4C/W thJC Note 1. All values apply in either direction. Electrical Characteristics: (At Maximum Ratings & Specified Case Temperature) Parameter Symbol Test Conditions Min Typ Max Unit Peak OffState Current I T = +90C, V = Max Rating, 0.75 mA DROM J DROM Gate Open, Note 1 Maximum OnState Voltage V T = +25C, i = 5A (Peak), Note 1 1.85 V TM C T DC Holding Current I T = +25C, Gate Open 5 mA HO C Critical RateofRise of OffState Critical T = +90C, v = V , Gate Open, 3 V/ s C D DROM Voltage dv/dt Note 1 DC GateTrigger Current MT (+) Gate (+), MT () Gate () I T = + 25C, v = 6V, R = 39 3 mA 2 2 GT C D L MT (+) Gate (), MT () Gate (+) 2 2 Note 1. All values apply in either direction.Electrical Characteristics (Contd): (At Maximum Ratings & Specified Case Temperature) Parameter Symbol Test Conditions Min Typ Max Unit DC Gate Trigger Voltage V T = +25C, v = 6V, R = 39 2.2 V GT C D L GateControlled TurnOn Time t T = +25C, v = V , I = 80mA, 2.2 s gt C D DROM GT t = 0.1 s, i = 10A (Peak) r T 2 2 Fusing Current (For TRIAC Protection) I t T = 1.25 to 10ms 3 A s .352 (8.95) Dia Max .320 (98.13) Dia Max .250 (6.35) Max 1.500 (38.1) Min .019 (0.5) Dia Gate MT 1 MT 2 45 .031 (.793) TO5