NTE5640 thru NTE5643 TRIAC, 2.5A Absolute Maximum Ratings: Repetitive Peak OffState Voltage (Gate Open, T = +100C, Note 1), V J DROM NTE5640 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V NTE5641 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5642 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5643 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V RMS OnState Current (T = +75C, Conduction Angle of 360), I . . . . . . . . . . . . . . . . . 2.5A C T(RMS) Peak Surge (NonRepetitive) OnState Current (One Cycle, at 50Hz or 60Hz), I . . . . . . . . 30A TSM Peak GateTrigger Current (3 s Max), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A GTM Peak GatePower Dissipation (I I for 3 s Max), P . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W GT GTM GM Average GatePower Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW G(AV) 2 2 Fusing Current (For TRIAC Protection, T = 1.25 to 10ms), It3. . . . . . . . . . . . . . . . . . . . . . . . . . . A s Operating Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +100C opr Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +150C stg Typical Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4C/W thJC Note 1. All values apply in either direction. Electrical Characteristics: (At Maximum Ratings and T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Peak OffState Current I V = Max Rating, T = +100C, 0.75 mA DROM DROM J Gate Open, Note 1 Maximum OnState Voltage V i = 5A (Peak), Note 1 2.2 V TM T DC Holding Current I Gate Open 15 mA H Critical RateofRise of OffState Voltage Critical v = V , T = +100C, Note 1 7 V/ s D DROM C dv/dt DC GateTrigger Current I v = 6V, R = 39 , All Quads 25 mA GT D L DC GateTrigger Voltage V v = 6V, R = 39 2.2 V GT D L GateControlled TurnOn Time t v = V , I = 80mA, t = 0.1 s, 2.2 s gt D DROM GT r i = 10A (Peak) T.352 (8.95) Dia Max .320 (98.13) Dia Max .250 (6.35) Max .500 (12.7) Min .019 (0.5) Dia Gate MT 1 MT 2 45 .031 (.793)