NTE60 (NPN) & NTE61 (PNP) Silicon Complementary Transistors High Power Audio, Disk Head Positioner for Linear Applications Description: The NTE60 (NPN) and NTE61 (PNP) are complementary silicon power transistors in a TO 3 type package designed for high power audio, disk head positioners, and other linear applications. Features: High Safe Operating Area: 250W 50V For Low Distortion Complementary Designs High DC Current Gain: h = 25 Min I = 5A FE C Absolute Maximum Ratings: CollectorEmitter Voltage, V ................................................. 140V CEO(sus) Collector Base Voltage, V ...................................................... 140V CBO EmitterBase Voltage, V .......................................................... 5V EBO Continuous Collector Current, I ..................................................... 20A C Continuous Base Current, I .......................................................... 5A B Continuous Emitter Current, I ....................................................... 25A E Total Power Dissipation (T = +25C), P ........................................... 250W C D Derate Above 25 C ...................................................... 1.43W/ C Operating Junction Temperature Range, T .................................. 65 to +200C J Storage Temperature Range, T .......................................... 65 to +200C stg Thermal Resistance, Junction toCase, R .................................... 0.70 C/W thJC Lead Temperature (During Soldering, 1/16 from Case, 10sec Max), T ................ +265 C L Note 1. Matched complementary pairs are available upon request (NTE61MCP). Matched comple- mentary pairs have their gain specification (h ) matched to within 10% of each other. FE Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Sustaining Voltage V I = 200mA, I = 0, Note 2 140 V CEO(sus) C B Collector Cutoff Current I V = 140V, V = 1.5V 100 A CEX CE BE(off) V = 140V, V = 1.5V, T = +150C 2 mA CE BE(off) C I V = 140V, I = 0 250 A CEO CE B Emitter Cutoff Current I V = 5V, I = 0 100 A EBO EB C Note 2. Pulse Test: Pulse Width = 300s, Duty Cycle = 2%.Electrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Second Breakdown Second Breakdown Collector Current I V = 50V, t = 1s (nonrepetitive) 5 A S/b CE with Base Forward Bias V = 100V, t = 1s (nonrepetitive) 1 A CE ON Characteristics DC Current Gain h V = 2V, I = 5A 25 150 FE CE C CollectorEmitter Saturation Voltage V I = 5A, I = 500mA 1 V CE(sat) C B BaseEmitter On Voltage V V = 2V, I = 5A 2 V BE(on) CE C Dynamic Characteristics Current GainBandwidth Product f V = 10V, I = 500mA, f = 0.5MHz 2 MHz T CE C test Output Capacitance C V = 10V, I = 0, f = 1MHz 1000 pF ob CB E test .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min .040 (1.02) Emitter 1.187 (30.16) .215 (5.45) .665 (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max .525 (13.35) R Max Base Collector/Case