NTE6129 NTE

NTE6129 electronic component of NTE
NTE6129 NTE
NTE6129 Rectifiers
NTE6129  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of NTE6129 Rectifiers across the USA, India, Europe, Australia, and various other global locations. NTE6129 Rectifiers are a product manufactured by NTE. We provide cost-effective solutions for Rectifiers, ensuring timely deliveries around the world.

Part No. NTE6129
Manufacturer: NTE
Category: Rectifiers
Description: RECTIFIER 1600V 700A 2.29
Datasheet: NTE6129 Datasheet (PDF)
Price (USD)
1: USD 299.0098 ea
Line Total: USD 299.01 
Availability : 0
  
QtyUnit Price
1$ 299.0098
10$ 246.0326
25$ 229.635
50$ 215.2786

Availability 0
Ship by Fri. 15 Aug to Thu. 21 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 299.0098
10$ 246.0326
25$ 229.635
50$ 215.2786


Availability 0
Ship by Wed. 13 Aug to Fri. 15 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 318.8206

   
Manufacturer
Product Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE6129 from our Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE6129 and other electronic components in the Rectifiers category and beyond.

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NTE6129 Silicon Power Rectifier Diode 700 Amp, DO200AB Features: High Power, Fast Recovery Time High Current Capability Low Forward Recovery Applications: Snubber Diode for GTO High Voltage Free Wheeling Diode Fast Recovery Rectifier Applications Ratings and Characteristics: Average Forward Current (T = +55C Max), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700A C F(AV) Maximum Repetitive Peak Reverse Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1600V RRM Maximum Non Repetitive Peak Reverse Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1700V RSM Maximum Reverse Current (T = +150C), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA J RRM Maximum Forward Surge Current, I FSM 50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9300A 60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9730A Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +150C stg Thermal Resistance, Junction toCase (DC Operation, single side cooled), R . . . . 0.092C/W thJC Thermal Resistance, Case toSink (DC Operation, double side cooled), R . . . . . . . 0.46C/W thCS Maximum Mounting Force (10%), F . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9800 (1000) N (Kg) Electrical Specifications: Parameter Symbol Test Conditions Rating Unit Maximum Average Forward Current I 180 Double side cooled, T = +55C 700 A F (AV) C condition, Half sine Single side cooled, T = +85C 365 A C waveParameter Symbol Test Conditions Rating Unit Maximum RMS Forward Current I +25C heatsink temperature double side cooled 1320 A F(RMS) Maximum Peak OneCycle I t = 10ms Half sinewave current, rated V 7820 A FSM RRM NonRepetitive Surge Current reapplied, initial T = +150C J t = 8.3ms 8190 A t = 10ms Half sinewave current, no voltage 9300 A reapplied, initial T = +150C J t = 8.3ms 7820 A Electrical Specifications (Contd): Parameter Symbol Test Conditions Rating Unit 2 2 2 Maximum I t for Fusing I t Rated V reapplied, initial t = 10ms 306 A s RRM T = +150C J 2 t = 8.3ms 279 A s 2 t = 10ms No voltage reapplied, initial 432 A s T = +150C J 2 t = 8.3ms 395 A s 2 2 2 t = 0.1 to 10ms, no voltage reapplied 4320 Maximum I t I t A t Maximum Peak Forward Voltage V T = +150C, I = 1500A, t = 10ms 2.2 V FM J pk p Recovery Characteristics: Test Conditions Max Values T = +150C J T = +25C J I t typical t pk rr rr Square Pulse di/dt V 25% I Q T 25% I r RRM rr rr RRM 2.0s 1000A 50A/a 50V 3.5s 240C 110A

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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