NTE631 Silicon Rectifier Diode HighSpeed Switch SOD110 Surface Mount Package Description: The NTE631 is a high speed switching diode fabricated in planar technology and encapsulated in a very small rectangular ceramic SOD110 SMD package. Features: Small Ceramic SOD110 SMD Package High Switching Speed Applications: High Speed Switching in Surface Mounted Circuits Absolute Maximum Ratings: Repetitive Peak Reverse Voltage, V ............................................... 85V RRM Continuous Reverse Voltage, V ..................................................... 75V R Continuous Forward Current (Note 1), I ........................................... 250mA F Repetitive Peak Forward Current, I ............................................ 5020mA FRM Non Repetitive Peak Forward Current (Square Wave, T = +25C Prior to Surge), I J FSM t = 1s ....................................................................... 4A t = 1ms ...................................................................... 1A t = 1sec .................................................................... 0.5A Total Power Dissipation (T = +25C, Note 1), P .................................. 400mW A tot Operating Junction Temperature, T ............................................... +150 C J Storage Temperature Range, T .......................................... 65 to +150C stg Thermal Resistance, Junction toAmbient (Note 1), R ........................... 315K/W thJA Thermal Resistance, Junction toCase, R ..................................... 200K/W thJC Note 1. Device mounted on an FR4 printed circuit board. Electrical Characteristics: (T = +25C, unless otherwise specified) J Parameter Symbol Test Conditions Min Typ Max Unit Forward Voltage V I = 1mA 715 mV F F I = 10mA 855 mV F I = 50mA 1.0 V F I = 150mA 1.25 V F Rev. 1214Electrical Characteristics (Contd): (T = +25C, unless otherwise specified) J Parameter Symbol Test Conditions Min Typ Max Unit Reverse Current I V = 25V 30 nA R R T = +150C 30 A J V = 75V 1 A R T = +150C 50 A J Diode Capacitance C f = 1MHz, V = 0 1.5 pF d R Reverse Recovery Time t When switched from I = 10mA to I = 10mA, 4 ns rr F R R = 100, measured at I = 1mA L R Forward Recovery Voltage V When switched from I = 10mA, t = 20ns 1.75 V fr F r .078 (2.0) .049 (1.25) .062 (1.6) Max Cathode Identifier KA