NTE870 Integrated Circuit Dual Operational Transconductance Amp Description: The NTE870 consists of two current controlled transconductance amplifiers each with differential in- puts and a pushpull output. The two amplifiers share common supplies but otherwise operate inde- pendently. Linearizing diodes are provided at the inputs to reduce distortion and allow higher input levels resulting in a 10dB signaltonoise improvement referenced to 0.5 percent THD. Controlled impedance buffers are provided which are especially designed to complement the dynamic range of the amplifiers. Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Supply Voltage, V+/V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V or 18V Differential Input Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V ID Diode Bias Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2mA D Amp Bias Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2mA ABC Buffer Output Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA o Power Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 570mW D DC Input Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V+ to V IN Operating Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 to +75C opr Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +125C stg Electrical Characteristics: (T = +25C, V+/V = 15V, I = 500 A unless otherwise specified) A ABC Parameter Symbol Test Conditions Min Typ Max Unit Input Offset Voltage (V ) V 0.4 5.0 mV OS IO Input Offset Voltage I = 5 A 0.3 5.0 mV ABC V Including Diodes Diode Base Current, I = 500 A 0.5 5.0 mV OS D Input Offset Change 5 A I 500 A 0.1 mV ABC Input Bias Current I 0.4 5.0 A B T = 20 to +75C 1.0 8.0 A AElectrical Characteristics (Contd): (T = +25C, V+/V = 15V, I = 500 A) A ABC Parameter Symbol Test Conditions Min Typ Max Unit Forward Transconductance (gm) gm 6700 9600 13000 mhos T = 20 to +75C 5400 mhos A gm Tracking R = 0, I = 5 A 0.3 dB L ABC Peak Output Current I R = 0, I = 5 A 5.0 A OP L ABC R = 0, I = 500 A 350 500 650 A L ABC R = 0, T = 20 to +75C 300 A L A Peak Output Voltage Positive V R = , 5 A I 500 A +12 14.2 V OP L ABC Peak Output Voltage Negative R = , 5 A I 500 A 12 14.4 V L ABC Supply Current I I = 500 A, two circuit 2.6 mA CC ABC V Sensitivity Positive SVR V / V+ 76.5 94.0 dB OS OS V Sensitivity Negative V / V 76.5 94.0 dB OS OS Input Offset Current I 0.1 0.6 A IO CMMR CMR 80 110 dB Common Mode Range V 12.0 13.5 V ICM Cross Talk CT 20Hz < f < 20kHz, Note 2 100 100 dB Differential Input Current I I = 0, Input = 4V 0.02 100 nA ID ABC Leakage Current I I = 0 0.2 0 nA LEAK ABC Input Resistance R 10 26 k IN Open Loop Bandwidth 2 MHz Slew Rate SR 50 V/ s Buffer Input Current Note 2 0.4 5.0 A Peak Buffer Output Voltage Note 2 10 V Note 1. Open unless otherwise specified. The inputs to the buffers are grounded and the outputs are open. Note 2. R = 5k connected from the buffer output to V and the input buffer is connected to OUT the transconductance amplifier output. I = 500 A. ABC