Product Information

NTE887M

NTE887M electronic component of NTE

Datasheet
Operational amplifier; -18÷18V; Channels:1; DIP8

Manufacturer: NTE
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 1.8525 ea
Line Total: USD 9.26

4 - Global Stock
Ships to you between
Fri. 17 May to Thu. 23 May
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
4 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 5
Multiples : 1
5 : USD 1.9112
25 : USD 1.7375
250 : USD 1.3875
500 : USD 1.3
1000 : USD 1.2625
2500 : USD 1.215
5000 : USD 1.1838
7500 : USD 1.165

     
Manufacturer
Product Category
Number of Channels
Mounting
Case
Type Of Integrated Circuit
Slew Rate
Operating Temperature
Power Dissipation
Input Offset Voltage
Operating Voltage
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NTE887M Integrated Circuit Low Power, JFET OP Amplifier Description: The NTE887M is a JFETinput operational amplifier in an 8Lead DIP type package designed as a lowpower version of the NTE857M amplifier. This device features high input impedance, wide band- width, high slew rate, and low input offset and bias current. Features: Very Low Power Consumption Typical Supply Current: 200 A Wide CommonMode and Differential Voltage Ranges Low Input Bias and Offset Currents CommonMode Input Voltage Range Includes V + CC Output ShortCircuit Protection High Input Impedance: JFETInput Stage Internal Frequency Compensation LatchUpFree Operation High Slew rate: 3.5V/ s Typ Absolute Maximum Ratings: (T = 0 to +70C unless otherwise specified) A Supply Voltage (Note 1), V + . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +18V CC Supply Voltage (Note 1), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V CC Differential Input Voltage (Note 2), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V ID Input Voltage (Note 1, Note 3), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V I Duration of Output Short Circuit (Note 4), t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Unlimited s Continuous Total Dissipation, P D T +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 680mW A Derate Above +65C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8mW/C T = +70C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 640mW A Operating Ambient Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 to +70C A Storage Temperature range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Lead Temperature (During Soldering, 1/16 (1.6mm) from case for 10sec), T . . . . . . . . . . . +260C L Note 1. All voltage values, except differential voltages, are with respect to the midpoint between V + and V . CC CC Note 2. Differential voltages are at the noninverting input pin with respect to the inverting input pin. Note 3. The magnitude of the input voltage must never exceed the magnitude of the supply voltage or 15V, whchever is less. Note 4. The output may be shorted to GND or to either supply. Temperature and/or supply voltages must be limited to ensure that the dissipation rating is not exceeded.Electrical Characteristics: (V = 15V, Note 5 unless otherwise specified) CC Parameter Symbol Test Conditions Min Typ Max Unit Input Offset Voltage V V = 0, T = +25C 3 15 mV IO A O R = 50 S T = 0 to +70C 20 mV A Temperature Coefficient of V = 0, R = 50 , T = 0 to +70C 10 V/C VIO O S A Input Offset Voltage Input Offset Current I V = 0, Note 6 T = +25C 5 200 pA IO O A T = 0 to +70C 5 nA A Input Bias Current I V = 0, Note 6 T = +25C 30 400 pA IB O A T = 0 to +70C 10 nA A 12 CommonMode Input Voltage Range V T = +25C 11 V ICR A +15 Maximim Peak Output Voltage Swing V R = 10k , T = +25C 10.0 13.5 V OM L A R 10k , T = 0 to +70C 10.0 V L A A T = +25C 3 6 V/mV LargeSignal Differential Voltage V = 10V, VD A O Amplification R 10k L T = 0 to +70C 3 V/mV A UnityGain Bandwidth B R = 10k , T = +25C 1 MHz 1 L A 12 Input Resistance r T = +25C 10 i A CommonMode Rejection Ratio CMRR V = V min, V = 0, R = 50 , 70 86 dB IC ICR O S T = +25C A Supply Volatge Rejection Ratio k V = 15V to 9V, V = 0, 70 95 dB SVR CC O ( V / V ) R = 50 , T = +25C CC IO S A Total Power Dissipation P No Load, V = 0, T = +25C 6.0 7.5 mW D O A Supply Current I No Load, V = 0, T = +25C 200 250 A CC O A Crosstalk Attenuation V /V A = 100, T = +25C 120 dB o1 o2 VD A Note 5. All characteristics are measured under openloop conditions with zero commonmode volt- age unless otherwise specified. Note 6. Input bias currents of a FETinput operational amplifier are normal junction reverse currents, which are temperature sensitive. Pulse techniques must be used that will maintain the junc- tion temperature as close to the ambient temperature as possible. Operating Characteristics: (V = 15V, T = +25C unless otherwise specified) CC A Parameter Symbol Test Conditions Min Typ Max Unit Slew Rate at Unity Gain SR V = 10V, R = 10k , C = 100pF 1.5 3.5 V/ s I L L Rise Time t V = 20mV, R = 10k , C = 100pF 0.2 s r I L L Overshoot Factor 10% Equivalent Input Noise Voltage V R = 100 , f = 1kHz 42 nV/Hz n S

Tariff Desc

8542.33.00 43 No -- Amplifiers

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits Digital.
NTE ELECTRONICS
NTE ELECTRONICS, INC.

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