NTE889M Integrated Circuit Dual, Low Power, JFET OP Amplifier Description: The NTE889M is a JFETinput operational amplifier in an 8Lead DIP type package designed for low power applications and features high input impedance, low input bias current, and low input offset current. Advanced design techniques allow for higher slew rates, gain bandwidth products, and out- put swing. Features: Low Supply Current: 200 A/Amplifier Low Input Bias Current: 5pA High Gain Bandwidth: 2MHz High Slew rate: 6V/ s 12 High Input Impedance: 10 Large Output Voltage Swing: 14V Output Short Circuit Protection Absolute Maximum Ratings: Supply Voltage (From V to V ), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +36V CC EE S Input Differential Input Voltage (Note 1), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V IDR Input Voltage Range (Note 1, Note 2), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V IR Output ShortCircuit Duration (Note 3), t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Indefinite Seconds s Operating Junction Temperature (Note 3), T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 to +70C J Storage Temperature range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C stg Storage temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 to +150C stg Note 1. Differential voltages are at the noninverting input terminal with respect to the inverting input terminal. Note 2. The magnitude of the input voltage must never exceed the magnitude of the supply voltage or 15V, whchever is less. Note 3. Power dissipation must be considered to ensure maximun junction temperature (T ) is not J exceeded.DC Electrical Characteristics: (V = +15V, V = 15V unless otherwise specified) CC EE Parameter Symbol Test Conditions Min Typ Max Unit Input Offset Voltage V V = 0, T = +25C 3 15 mV IO A O R = 50 S T = 0 to +70C 20 mV A Temperature Coefficient of V = 0, R = 50 , T = 0 to +70C 10 V/C VIO O S A Input Offset Voltage Input Offset Current I V = 0, V = 0 T = +25C 5 200 pA IO CM O A T = 0 to +70C 5 nA A Input Bias Current I V = 0, V = 0 T = +25C 30 200 pA IB CM O A T = 0 to +70C 10 nA A CommonMode Input Voltage Range V T = +25C +14.5 +11 V ICR A T = 0 to +70C 11 12 V A Maximim Peak Output Voltage Swing V R = 10k , T = +25C 10.0 14 V OM L A R = 10k , T = 0 to +70C 10.0 V L A LargeSignal Differential Voltage A V = 10V, T = +25C 3 58 V/mV VD O A Amplification R 10k L T = 0 to +70C 3 V/mV A Gain Bandwidth Product GBW f = 200kHz 2 MHz 12 Input Resistance r T = +25C 10 i A CommonMode Rejection Ratio CMRR V = V min, V = 0, R = 50 , 70 84 dB CM ICR O S T = +25C A Supply Volatge Rejection Ratio PSRR V = 0, V = 0, R = 50 , 70 86 dB CM O S T = +25C A Total Power Dissipation (Each Amp) P No Load, V = 0, T = +25C 6.0 7.5 mW D O A Power Supply Current (Each Amp) I No Load, V = 0, T = +25C 200 250 A D O A Channel Separation CS f = 10kHz 120 dB Slew Rate SR V = 10V to +10V, R = 10k , 2 6 V/ s in L C = 100pF, A = +1.0 L V Rise Time t 0.1 s V = 20mV, R = 10k , r in L C = 100pF, A = +1.0 L V Overshoot OS 10 % Setting Time S V = +15V, to within 10mV 1.6 s t CC V = 15V, EE AA = = 1.0,1.0, VV R = 10k , L to within 1.0mV 2.2 s V = 0 to 10V O step Equivalent Input Noise e R = 100 , f = 1kHz 47 nV/ Hz n S