ACTT2X-800E,127 NXP

ACTT2X-800E AC Thyristor Triac power switch 15 August 2014 Product data sheet 1. General description Planar passivated AC Thyristor Triac power switch in a SOT186A (TO-220F)full pac plastic package with self-protective capabilities against low and high energy transients. 2. Features and benefits Clamping structure ensuring safe high over-voltage withstand capability Direct interfacing with low power drivers and microcontrollers Full cycle AC conduction Isolated mounting base package Over-voltage withstand capability to IEC 61000-4-5 Pin compatible with standard triacs Planar passivated for voltage ruggedness and reliability Safe clamping capability for low energy over-voltage transients Self-protective turn-on during high energy voltage transients Sensitive gate for easy logic level triggering Triggering in three quadrants only Very high immunity to false turn-on by dV/dt 3. Applications AC fan, pump and compressor controls Highly inductive, resistive and safety loads Large and small appliances (White Goods) Reversing induction motor controls 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 800 V DRM state voltage I non-repetitive peak on- full sine wave T = 25 C - - 14 A TSM j(init) state current t = 20 ms Fig. 4 Fig. 5 p T junction temperature - - 125 C j I RMS on-state current full sine wave T 106 C Fig. 1 - - 2 A T(RMS) h Fig. 2 Fig. 3 Scan or click this QR code to view the latest information for this product TO-220FNXP Semiconductors ACTT2X-800E AC Thyristor Triac power switch Symbol Parameter Conditions Min Typ Max Unit V peak pulse voltage T = 25 C non-repetitive, off-state - - 2 kV PP j Fig. 6 Static characteristics I gate trigger current V = 12 V I = 100 mA LD+ G+ - - 10 mA GT D T T = 25 C Fig. 8 j V = 12 V I = 100 mA LD+ G- - - 10 mA D T T = 25 C Fig. 8 j V = 12 V I = 100 mA LD- G- - - 10 mA D T T = 25 C Fig. 8 j V clamping voltage I = 0.1 mA t = 1 ms T = 25 C 850 - - V CL CL p j Dynamic characteristics dV /dt rate of rise of off-state V = 536 V T = 125 C (V = 67% 500 - - V/s D DM j DM voltage of V ) exponential waveform gate DRM open circuit Fig. 13 dI /dt rate of change of V = 400 V T = 125 C I = 2 A 3 - - A/ms com D j T(RMS) commutating current dV /dt = 10 V/s gate open circuit com Fig. 14 Fig. 15 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 T1 main terminal 1 mb T2 T1 G 2 T2 main terminal 2 sym051 3 G gate mb n.c. mounting base isolated 1 2 3 TO-220F (SOT186A) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version ACTT2X-800E TO-220F plastic single-ended package isolated heatsink mounted 1 SOT186A mounting hole 3-lead TO-220full pac ACTT2X-800E All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2014. All rights reserved Product data sheet 15 August 2014 2 / 13