Product Information

NTE56026

NTE56026 electronic component of NTE

Datasheet
Triac; 600V; 40A; 50/80mA; screw; bulk; TO48

Manufacturer: NTE
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 82.8375 ea
Line Total: USD 82.84

5 - Global Stock
Ships to you between
Tue. 21 May to Mon. 27 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1
Multiples : 1
1 : USD 82.8375
5 : USD 67.3125
10 : USD 66.2875
25 : USD 63.35
50 : USD 59.825
100 : USD 58.225
250 : USD 56.675

1 - WHS 2


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1
Multiples : 1
1 : USD 63.063

     
Manufacturer
Product Category
Case
Kind Of Package
Mounting
Type Of Semiconductor Component
Max Load Current
Max Off-State Voltage
Gate Current
LoadingGif

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NTE5693/NTE5695/NTE5697 NTE56022/NTE56024/NTE56026 TRIAC, 40 Amp Description: This NTE 40 Amp series medium power TRIACs are bi directional triode thyristors which may be switched from off state to conduction for either polarity of applied voltage with positive or negative gate triggering. These devices are designed for control of AC loads in applications such as lighting, heating and motor speed control, as well as static switching relays. These devices are available in a standard TO48 package (NTE5693, NTE5695, and NTE5697) or an Isolated TO48 package NTE56022, NTE56024, and NTE56026). Absolute Maximum Ratings: Repetitive Peak OffState Voltage (T = +100 C), V J DRM NTE5693, NTE56022 ........................................................ 200V NTE5695, NTE56024 ........................................................ 400V NTE5697, NTE56026 ........................................................ 600V Repetitive Peak Reverse Voltage (T = +100 C), V J RRM NTE5693, NTE56022 ........................................................ 200V NTE5695, NTE56024 ........................................................ 400V NTE5697, NTE56026 ........................................................ 600V RMS OnState Current (T = +75 C, 360 Continuous), I .......................... 40A C T(RMS) Peak Surge (Non Repetitive) On State Current, I TSM OneCycle, 60Hz ........................................................... 400A OneCycle, 50Hz ........................................................... 350A Peak GateTrigger Current (3 s Max), I ........................................... 12A GTM Peak Gate Power Dissipation (I I for 3 s Max), P ........................... 40W GT GTM GM Average Gate Power Dissipation, P .......................................... 750mW G(AV) Operating Junction Temperature Range, T ................................. 40 to +100 C opr NTE56026 ONLY ................................................... 65 to +110 C Storage Temperature Range, T .......................................... 40 to +150 C stg NTE56026 ONLY ................................................... 65 to +150 C Thermal Resistance, Junction toCase, R thJC NTE5693, NTE5695, NTE5697 ............................................ 1.8 C/W NTE56022, NTE56024 .................................................... 2.1 C/W NTE56026 ................................................................ 1 C/W Rev. 614Electrical Characteristics: (At Maximum Ratings and Indicated Case Temperatures unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Peak OffState Current I T = +100 C, Gate Open, 4 mA DROM J V = Max Rating DROM Maximum OnState Voltage V T = +25 C, I = 100A (Peak) 2.5 V T C T DC Holding Current I T = +25 C, Gate Open 60 mA HOLD C Critical rateofRise of OffState Critical T = +100 C, At V , C DROM Voltage dv/dt Gate Open NTE5693, NTE56022 200 V/ s NTE5695, NTE56024 150 V/ s NTE5697, NTE56026 100 V/ s Critical RateofRise of Commutation Commutating T = +75 C, Gate Unenergized, 3 V/ s C v Voltage dv/dt D = V , T = I , DROM T(RMS) Commutating di/dt = 16A/ms v DC GateTrigger Current I T = +25 C, D = 12VDC, GT C (T +, Gate+ T , Gate) Quads III R = 30 50 mA 2 2 L (T +, Gate T , Gate+) Quads IIIV 80 mA 2 2 v DC GateTrigger Voltage V T = +25 C, D = 12VDC, 2.5 V GT C R = 30 L v GateControlled TurnOn Time t T = +25 C, D = V , 3 s gt C DROM I = 300mA, t = 0.1 s, GT r i T = 10A (Peak) NTE5693, NTE5695, NTE5697 NTE56022, NTE56024, NTE56026 .562 .562 (14.28) (14.28) Max Max Gate MT 1 MT 1 MT 2 Gate .1.193 (30.33) 1.260 Max (32.0) Max .595 (15.1) Max .200 (5.08) Max .453 .445 (111.5) (11.3) MT 1/428 UNF2A 2 Max Max (Isolated Stud) 1/428 UNF2A

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
NTE ELECTRONICS
NTE ELECTRONICS, INC.

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