DocumentNumber:AFT26H160--4S4 FreescaleSemiconductor Rev. 1, 11/2013 TechnicalData RFPowerLDMOSTransistor N--Channel Enhancement--ModeLateral MOSFET This32WasymmetricalDohertyRFpowerLDMOStransistorisdesignedfor AFT26H160--4S4R3 cellular base station applications covering the frequency range of 2496 to 2690MHz. TypicalDoherty Single--Carrier W--CDMA Performance: V =28Vdc, DD I = 500mA, V =0.6Vdc,P = 32W Avg., Input Signal DQA GSB out PAR = 9.9dB 0.01%Probability onCCDF. G OutputPAR ACPR 2496--2690MHz,32WAVG.,28V ps D Frequency (dB) (%) (dB) (dBc) 2496MHz 14.9 45.7 8.0 --28.9 2570MHz 15.4 45.6 7.9 --30.8 2690MHz 15.1 44.5 7.8 --33.0 Features AdvancedHighPerformanceIn--PackageDoherty Greater NegativeGate--SourceVoltageRangefor ImprovedClass C Operation Designedfor DigitalPredistortionError CorrectionSystems InTapeandReel. R3Suffix = 250Units, 56mm TapeWidth, 13--inchReel. NI--880XS--4L4S (1) 18 N.C. VBW A Carrier RF /V27 RF /V inA GSA outA DSA RF /V RF /V 36 inB GSB outB DSB Peaking (1) N.C.45 VBW B (TopView) Figure1.PinConnections 1. DevicecannotoperatewiththeV current DD suppliedthroughpin5andpin8. FreescaleSemiconductor, Inc., 2013. All rights reserved. AFT26H160--4S4R3 RF DeviceData FreescaleSemiconductor, Inc. 1Table1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V --0.5,+65 Vdc DSS Gate--SourceVoltage V --6.0,+10 Vdc GS OperatingVoltage V 32,+0 Vdc DD StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperatureRange T --40to+150 C C (1,2) OperatingJunctionTemperatureRange T --40to+225 C J Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R 0.41 C/W JC CaseTemperature74C,32W W--CDMA,28Vdc,I =500mA,V =0.6Vdc,2590MHz DQA GSB Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2 MachineModel(perEIA/JESD22--A115) B ChargeDeviceModel(perJESD22--C101) IV Table4.ElectricalCharacteristics (T =25 Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit (4) OffCharacteristics ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =65Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 1 Adc DSS (V =28Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS (4) OnCharacteristics -- SideA (Carrier) GateThresholdVoltage V 0.8 1.2 1.6 Vdc GS(th) (V =10Vdc,I =80 Adc) DS D GateQuiescentVoltage V 1.5 1.8 2.3 Vdc GS(Q) (V =28Vdc,I =500mAdc,MeasuredinFunctionalTest) DD DA Drain--SourceOn--Voltage V 0.1 0.15 0.3 Vdc DS(on) (V =6Vdc,I =0.8Adc) GS D (4) OnCharacteristics -- SideB (Peaking) GateThresholdVoltage V 0.8 1.2 1.6 Vdc GS(th) (V =10Vdc,I =120 Adc) DS D Drain--SourceOn--Voltage V 0.1 0.15 0.3 Vdc DS(on) (V =6Vdc,I =1.2Adc) GS D 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. MTTF calculator available at