STU3N45K3 STMicroelectronics

STU3N45K3 N-channel 450 V - 3.3 typ., 1.8 A Zener-protected SuperMESH3 Power MOSFET in a IPAK package Datasheet - production data Features R DS(on) Order code V I P DSS D w max TAB STU3N45K3 450 V < 4 1.8 A 27 W 3 100% avalanche tested 2 1 Extremely high dv/dt capability IPAK Gate charge minimized Very low intrinsic capacitance Improved diode reverse recovery characteristics Zener protected Figure 1. Internal schematic diagram D(2, TAB) Applications Switching applications Description G(1) This SuperMESH3 Power MOSFET is the result of improvements applied to STMicroelectronics SuperMESH technology, combined with a new optimized vertical structure. This device boasts an extremely low on- resistance, superior dynamic performance and S(3) high avalanche capability, rendering it suitable for AM01476v1 the most demanding applications. Table 1.Device summary Order code Marking Package Packaging STU3N45K3 3N45K3 IPAK Tube June 2013 DocID17206 Rev 3 1/14 This is information on a product in full production. www.st.comContents STU3N45K3 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Revision history . 13 2/14 DocID17206 Rev 3