Product Information

BAP1321LX,315

BAP1321LX,315 electronic component of NXP

Datasheet
Diode PIN Attenuator/Switch 60V Automotive 2-Pin SOD T/R
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

27: USD 1.1819 ea
Line Total: USD 31.91

0 - Global Stock
MOQ: 27  Multiples: 1
Pack Size: 1

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Vr - Reverse Voltage
Maximum Diode Capacitance
Maximum Series Resistance @ Maximum IF
If - Forward Current
Vf - Forward Voltage
Minimum Operating Temperature
Mounting Style
Packaging
Brand
Power Dissipation
Typical Carrier Life Time
Package Type
Pin Count
Series Resistance Minimum If
Type
Operating Temperature Min
Applications Frequency Range
Operating Temperature Classification
Configuration
Rad Hardened
LoadingGif

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Additional Infomation About Product

BAP1321LX Silicon PIN diode Rev. 01 30 July 2007 Product data sheet 1. Product prole 1.1 General description Planar PIN diode in a SOD882T leadless ultra small plastic SMD package. 1.2 Features n High voltage, current controlled n RF resistor for RF attenuators and switches n Low diode capacitance n Low diode forward resistance n Very low series inductance n For applications up to 3 GHz 1.3 Applications n RF attenuators and switches 2. Pinning information Table 1. Discrete pinning Pin Description Simplied outline Symbol 1 1 cathode 2 anode 1 2 sym006 Transparent top view 1 The marking bar indicates the cathode. 3. Ordering information Table 2. Ordering information Type number Package Name Description Version BAP1321LX - leadless ultra small plastic package 2 terminals SOD882T body 1 0.6 0.4 mmBAP1321LX NXP Semiconductors Silicon PIN diode 4. Marking Table 3. Marking Type number Marking code BAP1321LX LH 5. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V reverse voltage - 60 V R I forward current - 100 mA F P total power dissipation T = 90 C - 130 mW tot sp T storage temperature - 65 +150 C stg T junction temperature - 65 +150 C j 6. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit R thermal resistance from junction 74 K/W th(j-sp) to solder point 7. Characteristics Table 6. Characteristics T = 25 C unless otherwise specied. amb Symbol Parameter Conditions Min Typ Max Unit V forward voltage I = 50 mA - 0.95 1.1 V F F I reverse current V = 60 V - - 100 nA R R C diode capacitance see Figure 1 f = 1 MHz d V = 0 V - 0.32 - pF R V = 1 V - 0.27 0.38 pF R V = 20 V - 0.21 0.28 pF R r diode forward resistance see Figure 2 f = 100 MHz D I = 0.5 mA - 3.3 5.0 F I = 1 mA - 2.4 3.6 F I = 10 mA - 1.2 1.8 F I = 100 mA - 0.9 1.3 F ISL isolation see Figure 3 V =0V R f = 900 MHz - 17 - dB f = 1800 MHz - 12 - dB f = 2450 MHz - 10 - dB BAP1321LX 1 NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 30 July 2007 2 of 8

HS Compliance

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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