BAT54T NXP

BAT54T Single Schottky barrier diode Rev. 01 14 December 2009 Product data sheet 1. Product profile 1.1 General description Single planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a SOT416 (SC-75) ultra small Surface-Mounted Device (SMD) plastic package. 1.2 Features Low forward voltage: max. 400 mV Low capacitance: max. 10 pF Ultra small SMD plastic package AEC-Q101 qualified 1.3 Applications Ultra high-speed switching Voltage clamping Protection circuits Blocking diode 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I forward current - - 200 mA F V reverse voltage - - 30 V R 1 V forward voltage I =10mA --400 mV F F 1 Pulse test: t 300 s 0.02. pNXP Semiconductors BAT54T Single Schottky barrier diode 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 anode 3 3 2 not connected 2 3 cathode 1 n.c. 006aaa436 12 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BAT54T SC-75 plastic surface-mounted package 3 leads SOT416 4. Marking Table 4. Marking codes Type number Marking code BAT54T ZW 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V reverse voltage - 30 V R I forward current - 200 mA F I repetitive peak forward t 1s 0.5 - 300 mA FRM p current I non-repetitive peak square wave FSM forward current t = 100 s-4A p t =1ms - 2 A p t =10ms - 1 A p 1 P total power dissipation T 25 C -150 mW tot amb T junction temperature - 150 C j T ambient temperature 55 +150 C amb T storage temperature 65 +150 C stg 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. BAT54T 1 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 14 December 2009 2 of 9