Product Information

BAW56M,315

BAW56M,315 electronic component of NXP

Datasheet
Diodes - General Purpose, Power, Switching SWITCHING DIODE
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10000: USD 0.069 ea
Line Total: USD 690

0 - Global Stock
MOQ: 10000  Multiples: 10000
Pack Size: 10000

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 10000
Multiples : 10000
10000 : USD 0.069

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Packaging
Pd - Power Dissipation
Operating Temperature Range
Brand
Maximum Diode Capacitance
Factory Pack Quantity :
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Additional Infomation About Product

BAV756S; BAW56 series High-speed switching diodes Rev. 6 18 March 2015 Product data sheet 1. Product profile 1.1 General description High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package Package Configuration configuration Nexperia JEITA JEDEC BAV756S SOT363 SC-88 - very small quadruple common anode/common cathode BAW56 SOT23 - TO-236AB small dual common anode BAW56M SOT883 SC-101 - leadless ultra dual common anode small BAW56S SOT363 SC-88 - very small quadruple common anode/common anode BAW56T SOT416 SC-75 - ultra small dual common anode BAW56W SOT323 SC-70 - very small dual common anode 1.2 Features and benefits High switching speed: t 4 ns Low capacitance: C 2 pF rr d Low leakage current Reverse voltage: V 90 V R Small SMD plastic packages AEC-Q101 qualified 1.3 Applications High-speed switching General-purpose switching 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per diode I reverse current V = 80 V - - 0.5 A R R V reverse voltage - - 90 V R [1] t reverse recovery time - - 4 ns rr [1] When switched from I = 10 mA to I = 10 mA; R = 100 ; measured at I = 1 mA. F R L RBAV756S; BAW56 series Nexperia High-speed switching diodes 2. Pinning information Table 3. Pinning Pin Description Simplified outline Symbol BAV756S 1 anode (diode 1) 6 5 4 6 54 2 cathode (diode 2) 3 common anode (diode 2 and diode 3) 4 cathode (diode 3) 132 5 anode (diode 4) 132 6 common cathode (diode 1 006aab103 and diode 4) BAW56; BAW56T; BAW56W 1 cathode (diode 1) 3 3 2 cathode (diode 2) 3 common anode 12 006aaa144 12 006aab099 BAW56M 1 cathode (diode 1) 3 1 2 cathode (diode 2) 3 2 3 common anode Transparent top view 12 006aab099 BAW56S 1 cathode (diode 1) 6 5 4 6 54 2 cathode (diode 2) 3 common anode (diode 3 and diode 4) 4 cathode (diode 3) 132 5 cathode (diode 4) 132 006aab102 6 common anode (diode 1 and diode 2) BAV756S_BAW56_SER All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 6 18 March 2015 2 of 16

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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