Product Information

BB184,115

BB184,115 electronic component of NXP

Datasheet
Varactor Diodes Var Cap 13V 15.3pF

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3159 ea
Line Total: USD 0.32

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1
1 : USD 0.3159
5 : USD 0.3042
250 : USD 0.2866
1000 : USD 0.2808

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Capacitance
Vr - Reverse Voltage
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Configuration
Packaging
Brand
Applications Frequency Range
Minimum Tuning Ratio
Factory Pack Quantity :
Tuning Ratio Test Condition
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BB184 UHF low voltage variable capacitance diode Rev. 3 6 September 2011 Product data sheet 1. Product profile 1.1 General description The BB184 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOD523 (SC-79) ultra small SMD plastic package. 1.2 Features and benefits Very steep CV curve C : 14 pF C : 2 pF d(1V) d(10V) C to C ratio: typical 7 d(1V) d(10V) Ultra small SMD plastic package. 1.3 Applications Voltage Controlled Oscillators (VCO) Tuning in low voltage television. 2. Pinning information Table 1. Discrete pinning Pin Description Simplified outline Symbol 1 cathode 2 anode 1 2 sym008 3. Ordering information Table 2. Ordering information Type number Package Name Description Version BB184 - plastic surface mounted package 2 leads SOD523 4. Marking Table 3. Marking Type number Marking code BB184 A2BB184 NXP Semiconductors UHF low voltage variable capacitance diode 5. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V continuous reverse voltage - 13 V R I continuous forward current - 10 mA F T storage temperature 55 +150 C stg T operating junction temperature 55 +125 C j 6. Characteristics Table 5. Electrical characteristics T = 25 C unless otherwise specified. j Symbol Parameter Conditions Min Typ Max Unit I reverse current V = 10 V see Figure 2 --10 nA R R V = 10 V T = 85 C see Figure 2 --200 nA R j r diode series resistance f = 470 MHz C =9pF - 0.65 - s d C diode capacitance f = 1 MHz see Figure 1 and 3 d V = 1 V 12.7 14 15.3 pF R V = 4 V - 5.5 - pF R V = 10 V 1.87 2 2.13 pF R capacitance ratio f = 1 MHz 6 7 - C d1V ------------------ C d10V capacitance matching V = 1 to 10 V in a sequence of 5 diodes --2 % R C d ---------- (gliding) C d BB184 All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 3 6 September 2011 2 of 8

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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