Product Information

BF1118,215

BF1118,215 electronic component of NXP

Datasheet
NXP Semiconductors RF Switch ICs SILICON RF SWITCHES

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 0.65
10 : USD 0.5447
100 : USD 0.3319
1000 : USD 0.2579
3000 : USD 0.2362
9000 : USD 0.2326
24000 : USD 0.229
45000 : USD 0.2242
99000 : USD 0.2157
N/A

Obsolete
     
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RoHS - XON
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BF1118 BF1118R BF1118W BF1118WR Silicon RF switches Rev. 3 14 November 2014 Product data sheet 1. Product profile 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor (FET) and a band-switching diode. The BF1118, BF1118R, BF1118W and BF1118WR are encapsulated in the SOT143B, SOT143R, SOT343N and SOT343R respectively. The low loss and high isolation capabilities of these devices provide excellent RF switching functions. The gate of the MOSFET can be isolated from ground with the diode, resulting in low losses. Integrated diodes between gate and source and between gate and drain protect against excessive input voltage surges. 1.2 Features and benefits Specially designed for low loss RF switching up to 1 GHz 1.3 Applications Various RF switching applications such as: Passive loop through for VCR tuner Transceiver switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit 1 on-state insertion loss R =R =50 f 1GHz --2.5 dB L ins(on) S L V =V =0V I =0mA SK DK F ISL off-state isolation R =R =50 f 1GHz 30 - - dB off S L V =V = 3.3 V I =1mA SK DK F R drain-source on-state resistance V =0V I = 1 mA - 15 23.3 DSon KS D V gate-source pinch-off voltage V =1V I =20 A- 2 2.44 V GS(p) DS D 1 I = diode forward current. FBF1118(R) BF1118W(R) NXP Semiconductors Silicon RF switches 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BF1118 (SOT143B) 1 FET gate diode anode 2 diode cathode 1 3 source 1 4drain DL D BF1118R (SOT143R) 1 FET gate diode anode 2 diode cathode 1 3 source 1 4drain DL D BF1118W (SOT343N) 1 FET gate diode anode 2 diode cathode 1 3 source 1 4drain DL D BF1118WR (SOT343R) 1 FET gate diode anode 2 diode cathode 1 3 source 1 4drain DL D 1 Drain and source are interchangeable. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BF1118 - plastic surface-mounted package 4 leads SOT143B BF1118R - plastic surface-mounted package reverse pinning 4 leads SOT143R BF1118W - plastic surface-mounted package 4 leads SOT343N BF1118WR - plastic surface-mounted package reverse pinning 4 leads SOT343R BF1118 1118R 1118W 1118WR All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2014. All rights reserved. Product data sheet Rev. 3 14 November 2014 2 of 13

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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