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BF1202,215

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Trans RF MOSFET N-CH 10V 0.03A 4-Pin(3+Tab) SOT-143B T/R

Manufacturer: NXP

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

69: USD 0.3959 ea
Line Total: USD 27.32

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MOQ: 69 Multiples: 1
Pack Size: 1

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Additional Infomation About Product

DISCRETE SEMICONDUCTORS DATA SHEET BF1202 BF1202R BF1202WR N-channel dual-gate PoLo MOS-FETs Product specification 2010 Sep 16 Supersedes data of 2000 Mar 29NXP Semiconductors Product specification N-channel dual-gate PoLo MOS-FETs BF1202 BF1202R BF1202WR FEATURES PINNING Short channel transistor with high PIN DESCRIPTION handbook, 2 columns3 4 forward transfer admittance to input 1source capacitance ratio 2drain Low noise gain controlled amplifier 3gate2 2 1 Partly internal self-biasing circuit to 4gate1 ensure good cross-modulation Top view MSB035 performance during AGC and good DC stabilization. Marking code legend: BF1202R marking code: LE* * = - : made in Hong Kong APPLICATIONS * = p : made in Hong Kong Fig.2 Simplified outline VHF and UHF applications with (SOT143R). * = t : made in Malaysia 3 to 9 V supply voltage, such as digital and analogue television tuners and professional communications equipment. handbook, 2 columns4 3 3 4 lfpage DESCRIPTION Enhancement type N-channel field-effect transistor with source and 12 21 substrate interconnected. Integrated Top view MSB014 Top view MSB842 diodes between gates and source protect against excessive input voltage surges. The BF1202, BF1202 marking code: LD* BF1202WR marking code: LE* BF1202R and BF1202WR are encapsulated in the SOT143B, Fig.1 Simplified outline Fig.3 Simplified outline SOT143R and SOT343R plastic (SOT143B). (SOT343R). packages respectively. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V drain-source voltage 10 V DS I drain current 30 mA D P total power dissipation 200 mW tot y forward transfer admittance 25 30 40 mS fs C input capacitance at gate 1 1.7 2.2 pF ig1-ss C reverse transfer capacitance f = 1 MHz 15 30 fF rss F noise figure f = 800 MHz 1.1 1.8 dB X cross-modulation input level for k = 1% at 100 105 dBV mod 40 dB AGC T operating junction temperature 150 C j CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. 2010 Sep 16 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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Manufacturer NXP NXP
Product Category RF MOSFET Transistors RF MOSFET Transistors
Id - Continuous Drain Current 0.03 A 0.03 A
Gain 34.5 dB 34.5 dB
Pd - Power Dissipation 0.2 W 0.2 W
Packaging Tape And Reel Tape And Reel
Drain Current Max 0.03 A 0.03 A
Gate-Source Voltage Max 6 V 6 V
Mounting Surface Mount Surface Mount
Noise Figure 11 Db 11 Db
Operating Temp Range - 65 C to 150 C - 65 C to 150 C
Package Type SOT - 143B SOT - 143B
Pin Count 3 + Tab 3 + Tab
Polarity N N
Type Rf Mosfet Rf Mosfet
Number Of Elements 1 1
Operating Temperature Classification military military
Channel Mode Enhancement Enhancement
Drain-Source On-Volt 10 V 10 V
Rad Hardened No No
Channel Type N N
Screening Level Military Military
Application Vhf/Uhf Vhf/Uhf
Output Capacitance Typ Vds 0.85@5v pF 0.85@5v pF
Power Gain Typ Vds 34.5@5 V (dB) 34.5@5 V (dB)
Reverse Capacitance Typ 0.015@5v pF 0.015@5v pF
Noise Figure Max 11(Db) 11(Db)
Drain Source Voltage Max 10 V 10 V