BF1212,215 NXP

DISCRETE SEMICONDUCTORS DATA SHEET BF1212 BF1212R BF1212WR N-channel dual-gate MOS-FETs Product specification 2003 Nov 14NXP Semiconductors Product specification BF1212 BF1212R N-channel dual-gate MOS-FETs BF1212WR FEATURES PINNING Short channel transistor with high forward transfer PIN DESCRIPTION admittance to input capacitance ratio 1source Low noise gain controlled amplifier 2drain Excellent low frequency noise performance 3gate2 Partly internal self-biasing circuit to ensure good 4gate1 cross-modulation performance during AGC and good DC stabilization. APPLICATIONS handbook, 2 columns4 3 Gain controlled low noise VHF and UHF amplifiers for 5 V digital and analog television tuner applications. 12 DESCRIPTION Top view MSB014 Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input BF1212 marking code: LGp voltage surges. The BF1212, BF1212R and BF1212WR Fig.1 Simplified outline (SOT143B). are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively. handbook, 2 columns3 4 3 4 handbook, halfpage 2 1 21 Top view MSB842 Top view MSB035 BF1212R marking code: LKp BF1212WR marking code: ML Fig.2 Simplified outline (SOT143R). Fig.3 Simplified outline (SOT343R). QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V drain-source voltage 6V DS I drain current 30 mA D P total power dissipation 180 mW tot y forward transfer admittance 28 33 43 mS fs C input capacitance at gate 1 1.7 2.2 pF ig1-ss C reverse transfer capacitance f = 1 MHz 15 30 fF rss F noise figure f = 800 MHz 1.1 1.8 dB X cross-modulation input level for k = 1 % at 100 104 dBV mod 40 dB AGC T junction temperature 150 C j 2003 Nov 14 2