Product Information

BF245C,112

BF245C,112 electronic component of NXP

Datasheet
RF JFET Transistors BULK FET-RFSS

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.1942 ea
Line Total: USD 0.19

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1
Multiples : 1
1 : USD 0.1942
5 : USD 0.1931
50 : USD 0.1872
250 : USD 0.1766
1000 : USD 0.1708
2500 : USD 0.1696

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Id - Continuous Drain Current
Maximum Drain Gate Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Configuration
Brand
Gate-Source Cutoff Voltage
Factory Pack Quantity :
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DISCRETE SEMICONDUCTORS DATA SHEET BF245A BF245B BF245C N-channel silicon field-effect transistors Product specification 1996 Jul 30 Supersedes data of April 1995NXP Semiconductors Product specification BF245A BF245B N-channel silicon field-effect transistors BF245C FEATURES PINNING Interchangeability of drain and source connections PIN SYMBOL DESCRIPTION Frequencies up to 700 MHz. 1 d drain 2 s source APPLICATIONS 3g gate LF, HF and DC amplifiers. DESCRIPTION 1 handbook, halfpage 2 General purpose N-channel symmetrical junction 3 d field-effect transistors in a plastic TO-92 variant package. g s MAM257 CAUTION The device is supplied in an antistatic package. The Fig.1 Simplified outline (TO-92 variant) gate-source input must be protected against static and symbol. discharge during transport or handling. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V drain-source voltage 30 V DS V gate-source cut-off voltage I =10nA V =15V 0.258V GSoff D DS V gate-source voltage open drain 30 V GSO I drain current V =15V V =0 DSS DS GS BF245A 2 6.5 mA BF245B 6 15 mA BF245C 12 25 mA P total power dissipation T =75 C 300 mW tot amb y forward transfer admittance V =15V V =0 3 6.5 mS fs DS GS f= 1kHz T =25 C amb C reverse transfer capacitance V =20V V = 1V 1.1 pF rs DS GS f= 1MHz T =25 C amb 1996 Jul 30 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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