BF992,215 NXP

BF992 Silicon N-channel dual gate MOS-FET Rev. 04 21 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. NXP Semiconductors Product specication Silicon N-channel dual gate MOS-FET BF992 APPLICATIONS PINNING VHF applications such as VHF television tuners and FM PIN SYMBOL DESCRIPTION tuners with 12 V supply voltage. The device is also 1 s, b source suitable for use in professional communications 2 d drain equipment. 3g gate 2 2 4g gate 1 DESCRIPTION 1 Depletion type field-effect transistor in a plastic micro-miniature SOT143B package with source and handbook, halfpage d substrate interconnected. 43 The transistor is protected against excessive input voltage g 2 surges by integrated back-to-back diodes between gates g and source. 1 CAUTION 1 2 The device is supplied in an antistatic package. s,b The gate-source input must be protected against static Top view MAM039 discharge during transport or handling. Marking code: %MB. Fig.1 Simplified outline (SOT143B) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V drain-source voltage (DC) - 20 V DS I drain current (DC) - 40 mA D P total power dissipation T =60C - 200 mW tot amb Y forward transfer admittance f = 1 kHz I = 15 mA V =10V 25 - mS fs D DS V =4V G2-S C input capacitance at gate 1 f = 1 MHz I = 15 mA V =10V 4 - pF ig1-s D DS V =4V G2-S C reverse transfer capacitance f = 1 MHz I = 15 mA V =10V 30 - fF rs D DS V =4V G2-S F noise gure G = 2 mS I = 15 mA V =10V 1.2 - dB S D DS V = 4 V f = 200 MHz G2-S T operating junction temperature - 150 C j Rev. 04 - 21 November 2007 2 of 9