Product Information

BF545C,215

BF545C,215 electronic component of NXP

Datasheet
Transistors RF JFET JFET N-CH 30V 10MA
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 0.9072
10 : USD 0.7938
100 : USD 0.6154
500 : USD 0.5232
1000 : USD 0.4506
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 3000
1 : USD 0.3062
400 : USD 0.2592
N/A

Obsolete
0 - WHS 3

MOQ : 3000
Multiples : 3000
3000 : USD 0.301
9000 : USD 0.301
24000 : USD 0.2895
45000 : USD 0.2852
99000 : USD 0.2789
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Id - Continuous Drain Current
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Configuration
Product
Type
Brand
Continuous Drain Current
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

BF545A BF545B BF545C N-channel silicon junction field-effect transistors Rev. 4 15 September 2011 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits Low leakage level (typ. 500 fA) High gain Low cut-off voltage (max. 2.2 V for BF545A). 1.3 Applications Impedance converters in e.g. electret microphones and infra-red detectors VHF amplifiers in oscillators and mixers. 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage - - 30 V DS V gate-source cut-off I =1 A V =15V 0.4 - 7.8 V GSoff D DS voltage I drain current V =0V V =15V DSS GS DS BF545A 2 - 6.5 mA BF545B 6 - 15 mA BF545C 12 - 25 mA P total power dissipation T 25 C--250mW tot amb y forward transfer V =0V V =15V 3 - 6.5 mS fs GS DS admittance SOT23BF545A BF545B BF545C NXP Semiconductors N-channel silicon junction field-effect transistors) 2. Pinning information Table 2. Pinning Pin Description Simplified outline Symbol 1 source (s) 3 d 2drain (d) g s 3gate (g) sym054 12 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BF545A - plastic surface mounted package 3 leads SOT23 BF545B BF545C 4. Marking Table 4. Marking 1 Type number Marking code BF545A 20* BF545B 21* BF545C 22* 1 * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China. BF545A BF545B BF545C All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 4 15 September 2011 2 of 16

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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