BF998WR,115 NXP

DISCRETE SEMICONDUCTORS DATA SHEET BF998WR N-channel dual-gate MOS-FET Product specification 1997 Sep 05 Supersedes data of 1995 Apr 25NXP Semiconductors Product specification N-channel dual-gate MOS-FET BF998WR FEATURES PINNING High forward transfer admittance PIN SYMBOL DESCRIPTION Short channel transistor with high forward transfer 1s, b source admittance to input capacitance ratio 2 d drain Low noise gain controlled amplifier up to 1 GHz. 3g gate 2 2 4g gate 1 1 APPLICATIONS VHF and UHF applications with 12 V supply voltage, such as television tuners and professional d communications equipment. 34 g 2 DESCRIPTION g 1 Depletion type field-effect transistor in a plastic microminiature SOT343R package with source and substrate interconnected. The transistor is protected 21 against excessive input voltage surges by integrated s,b back-to-back diodes between gates and source. Top view MAM198 CAUTION Marking code: MB. The device is supplied in an antistatic package. The gate-source input must be protected against static Fig.1 Simplified outline (SOT343R) and symbol. discharge during transport or handling. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V drain-source voltage 12 V DS I drain current 30 mA D P total power dissipation 300 mW tot T operating junction temperature 150 C j y forward transfer admittance 24 mS fs C input capacitance at gate 1 2.1 pF ig1-s C reverse transfer capacitance f = 1 MHz 25 fF rs F noise figure f = 800 MHz 1 dB 1997 Sep 05 2