BFQ67,215 NXP

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BFQ67 NPN 8 GHz wideband transistor Product specification 1998 Aug 27 Supersedes data of September 1995NXP Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67 FEATURES DESCRIPTION High power gain Silicon NPN wideband transistor in a alfpage 3 plastic SOT23 package. Low noise figure High transition frequency PINNING Gold metallization ensures excellent reliability. PIN DESCRIPTION 12 1base Top view MSB003 APPLICATIONS 2 emitter Satellite TV tuners and RF portable 3 collector Marking code: V2p. communications equipment up to 2GHz. Fig.1 SOT23. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-base voltage open emitter 20 V CBO V collector-emitter voltage open base 10 V CEO I collector current (DC) 50 mA C P total power dissipation T 97 C note 1 300 mW tot s h DC current gain I =15mA V =5V 60 100 FE C CE f transition frequency I =15mA V =8V 8 GHz T C CE G maximum unilateral I =15mA V =8V f= 1GHz 14 dB UM C CE power gain F noise figure I =5mA V =8V f= 1GHz 1.3 dB C CE Note 1. T is the temperature at the soldering point of the collector tab. s LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter 20 V CBO V collector-emitter voltage open base 10 V CEO V emitter-base voltage open collector 2.5 V EBO I collector current (DC) 50 mA C P total power dissipation T 97 C note 1 300 mW tot s T storage temperature range 65 +150 C stg T junction temperature 175 C j Note 1. T is the temperature at the soldering point of the collector tab. s 1998 Aug 27 2