Product Information

BFR31.215

BFR31.215 electronic component of NXP

Datasheet
JFET TAPE7 FET-RFSS
High power, low-voltage bipolar RF transistor providing up to 12 dB gain.

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3: USD 0.3473 ea
Line Total: USD 1.04

0 - Global Stock
MOQ: 3  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 3
Multiples : 1
3 : USD 0.3473
11 : USD 0.2037
148 : USD 0.1924
3000 : USD 0.1881

0 - WHS 2


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 3
Multiples : 1
3 : USD 0.3793
12 : USD 0.2086
154 : USD 0.1956

     
Manufacturer
Product Category
Case
Mounting
Polarisation
Kind Of Package
Type Of Transistor
Drain Current
Gate-Source Voltage
Gate Current
Power Dissipation
Drain-Source Voltage
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's SAA5231M series BFR31.215 is an Darlington Transistor array part of NXP's SAA5231M series. It features two channels that are driven by independent input and output stages. The transistor array has a total power dissipation (maximum) of 1.7W and a maximum collector current of 1.2A. It has a typical voltage drop between the collector and emitter terminals of 0.8V. Its maximum AC and DC voltages are rated at 50V and 40V, respectively. The junction temperature range for the part is -40°C to +125°C. The package for BFR31.215 is an 8-pin DIP and the dimensions are 6.2 x 6.2 x 7.5 mm.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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