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BFR520T,115

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RF Bipolar Transistors NPN 20V 70mA 9GHZ

Manufacturer: NXP

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

3000: USD 0.2354 ea
Line Total: USD 706.2

0 - Global Stock

MOQ: 3000 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Fri. 17 May to Thu. 23 May MOQ : 3000 Multiples : 1 BFR520T,115 NXP	3000 : USD 0.2354

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Additional Infomation About Product

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BFR520T NPN 9 GHz wideband transistor Product specification 2000 Apr 03 Supersedes data of 1999 Nov 02NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFR520T FEATURES DESCRIPTION High power gain Silicon NPN transistor encapsulated in a plastic SOT416 (SC-75) package. 3 Low noise figure lfpage High transition frequency PINNING Gold metallization ensures excellent reliability PIN DESCRIPTION 12 SOT416 (SC-75) package. Top view MBK090 1base 2emitter APPLICATIONS 3 collector Marking code: N2. Wideband applications such as satellite TV tuners, cellular phones, Fig.1 SOT416. cordless phones, pagers etc., with signal frequencies up to 2 GHz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-base voltage open emitter 20 V CBO V collector-emitter voltage R =0 15 V CES BE I DC collector current 70 mA C P total power dissipation up to T =75 C note 1 150 mW tot s h DC current gain I =20mA V =6V T =25 C 60 120 250 FE C CE j f transition frequency I =20mA V = 6 V f = 1 GHz 9 GHz T C CE T =25 C amb G maximum unilateral power I =20mA V = 6 V f = 900 MHz 15 dB UM C CE gain T =25 C amb F noise figure I =5mA V = 6 V f = 900 MHz 1.1 1.6 dB C CE T =25 C amb Note 1. T is the temperature at the soldering point of the collector tab. s LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter 20 V CBO V collector-emitter voltage R =0 15 V CES BE V emitter-base voltage open collector 2.5 V EBO I DC collector current 70 mA C P total power dissipation up to T =75 C note 1 150 mW tot s T storage temperature 65 +150 C stg T junction temperature 150 C j Note 1. T is the temperature at the soldering point of the collector tab. s 2000 Apr 03 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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Manufacturer NXP NXP
Product Category RF Bipolar Transistors RF Bipolar Transistors
RoHS - XON Y Y
Transistor Type Bipolar Bipolar
Technology Si Si
Transistor Polarity Npn Npn
Operating Frequency 9000 MHz 9000 MHz
Collector- Emitter Voltage VCEO Max 15 V 15 V
Emitter- Base Voltage VEBO 2.5 V 2.5 V
Continuous Collector Current 0.07 A 0.07 A
Pd - Power Dissipation 150 mW 150 mW
Minimum Operating Temperature - 65 C - 65 C
Maximum Operating Temperature + 150 C + 150 C
Mounting Style Smd/Smt Smd/Smt
Package / Case SOT - 416 SOT - 416
Packaging Reel Reel
Configuration Single Single
Brand Nxp Semiconductors Nxp Semiconductors
Maximum Dc Collector Current 0.07 A 0.07 A
Factory Pack Quantity : 3000 3000